Datasheet

TPS2379
www.ti.com SLVSB98 –MARCH 2012
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RECOMMENDED OPERATING CONDITIONS
Voltages with respect to V
SS
(unless otherwise noted)
MIN NOM MAX UNIT
RTN, V
DD
0 57
Input voltage range V
T2P or CDB to RTN 0 57
RTN 0.85 A
Sinking current
CDB, T2P 2 mA
Resistance CLS
(1)
60 Ω
Junction temperature –40 125 °C
(1) Voltage should not be externally applied to this pin.
ELECTRICAL CHARACTERISTICS
40 V ≤ V
VDD
≤ 57 V, R
DEN
= 24.9 kΩ, CDB, CLS, GATE, T2P open; –40°C ≤ T
J
≤ 125°C. Positive currents are into pins.
Typical values are at 25°C. All voltages are with respect to V
VSS
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DETECTION (DEN)
Measure I
SUPPLY
(VDD, RTN, DEN)
Detection current V
DD
= 1.4 V 53.8 56.5 58.3 µA
V
DD
= 10.1 V, Not in mark 395 410 417
Bias current DEN open, V
VDD
= 10.1 V, Measure I
SUPPLY
, Not in mark 3 4.8 12 µA
Disable threshold DEN falling 3 3.7 5 V
V
PD_DIS
Hysteresis 50 113 200 mV
CLASSIFICATION (CLS)
13 V ≤ V
DD
≤ 21 V, Measure I
VDD
+ I
DEN
+ I
RTN
R
CLS
= 1270 Ω 1.8 2.17 2.6
R
CLS
= 243 Ω 9.9 10.6 11.2
I
CLS
Classification current
R
CLS
= 137 Ω 17.6 18.6 19.4 mA
R
CLS
= 90.9 Ω 26.5 27.9 29.3
R
CLS
= 63.4 Ω 38 39.9 42.0
V
DD
rising, V
CLS
↑ 11.9 12.5 13.0
V
CL_ON
Class lower threshold V
Hysteresis 1.4 1.6 1.7
V
CL_H
V
CU_ON
V
DD
rising, V
CLS
↓ 21 22 23
Class upper threshold
V
CU_H
Hysteresis 0.5 0.78 0.9 V
V
MSR
Mark reset threshold V
VDD
falling 3 3.9 5
Mark state resistance 2-point measurement at 5 V and 10.1 V 6 10 12 kΩ
Leakage current V
DD
= 57 V, V
CLS
= 0 V, measure I
CLS
1 µA
GATE (Auxiliary Gate Output)
Output high voltage 8 10 12 V
Sourcing current V
GATE
= 0 V 25 38 60 µA
V
GATE
= 4 V, V
DD
= 48→ 25 V 0.6 1.25 1.75
Sinking current mA
V
DD
= 25 V, V
GATE
= 0→ 4 V 5 23.2 30
Current limit delay 150 365 600 µs
PASS DEVICE (RTN)
r
DS(ON)
On resistance 0.2 0.42 0.75 Ω
Input bias current V
DD
= V
RTN
= 30 V, measure I
RTN
30 µA
Current limit V
RTN
=1.5 V 0.85 1 1.2 A
Inrush current limit V
RTN
= 2 V, V
DD
: 20 V → 48 V 100 140 180 mA
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