Datasheet
Table Of Contents

120
130
140
150
160
−50 −25 0 25 50 75 100 125
Junction Temperature (°C)
Current Inrush Limit (mA)
G009
85
86
87
88
89
−50 −25 0 25 50 75 100 125
Junction Temperature (°C)
Inrush Current Termination at (%)
G010
0.2
0.3
0.4
0.5
0.6
0.7
−50 −25 0 25 50 75 100 125
Junction Temperature (°C)
Pass FET Resistance (Ω)
G008
0.99
1
1.01
1.02
−50 −25 0 25 50 75 100 125
Junction Temperature (°C)
Current Limit (A)
G011
8.5
8.8
9
9.2
9.5
9.8
10
−50 −25 0 25 50 75 100 125
Junction Temperature (°C)
Mark Reset Resistance (kΩ)
G007
120
160
200
240
280
320
360
400
20 25 30 35 40 45 50 55 60
T
A
= −40°C
T
A
= 125°C
T
A
= 25°C
V
(VDD−VSS)
(V)
I
VDD
(µA)
G009
TPS2378
SLVSB99B –MARCH 2012–REVISED NOVEMBER 2013
www.ti.com
TYPICAL CHARACTERISTICS (continued)
Figure 9. Mark Resistance vs PoE Voltage Figure 10. I
VDD
Bias Current vs Voltage
Figure 11. Pass FET Resistance vs Temperature Figure 12. PoE Current Limit vs Temperature
Figure 13. PoE Inrush Current Limit vs Temperature Figure 14. Inrush Termination Threshold vs Temperature
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