Datasheet
TPS23754
TPS23754-1
TPS23756
www.ti.com
SLVS885G –OCTOBER 2008–REVISED OCTOBER 2013
RECOMMENDED OPERATING CONDITIONS
(1)
Voltage with respect to V
SS
(unless otherwise noted)
MIN NOM MAX UNIT
Input voltage range ARTN, COM, PPD, RTN, V
DD
, V
DD1
0 57 V
Input voltage range T2P, V
C
to [ARTN, COM] 0 18 V
Input voltage range APD, CTL, DT to [ARTN, COM] 0 V
B
V
Input voltage range CS to [ARTN, COM] 0 2 V
Continuous RTN current (T
J
≤ 125°C)
(2)
825 mA
Sourcing current, V
B
0 2.5 5 mA
V
B
capacitance 0.08 μF
R
BLNK
0 350 kΩ
Synchronization pulse width input (when used) 25 ns
Operating junction temperature range, T
J
–40 125 °C
(1) ARTN and COM tied to RTN.
(2) This is the minimum current-limit value. Viable systems are designed for maximum currents below this value with reasonable margin.
IEEE 802.3at permits 600-mA continuous loading.
DISSIPATION RATINGS
Ψ
JT
θ
JP
θ
JA
θ
JA
MAXIMUM POWER RATING
PACKAGE
°C/W
(1)
°C/W °C/W
(2)
°C/W
(3)
(W)
(4)
PWP (TSSOP-20) 0.607 1.4 32.6 73.8 1.2
(1) Thermal resistance junction to case top for devices mounted per SLMA002. T
J
= T
TOP
+ (Ψ
JT
× P
J
). Use Ψ
JT
to validate T
J
from
measurements.
(2) See TI document SLMA002 for recommended layout. This is a best case, natural convection number.
(3) JEDEC method with high-k board (2 signal – 2 plane layers) and power pad not soldered (worst case).
(4) Based on TI recommended layout and 85°C.
ELECTRICAL CHARACTERISTICS
Unless otherwise noted: CS = COM = APD = CTL = RTN = ARTN, GATE and GAT2 float, R
FRS
= 68.1 kΩ, R
BLNK
= 249 kΩ, DT
= V
B
, PPD = V
SS
, T2P open, C
VB
= C
VC
= 0.1 μF, R
DEN
= 24.9 kΩ, R
CLS
open, 0 V ≤ (V
DD
, V
DD1
) ≤ 57 V, 0 V ≤ V
C
≤ 18 V,
–40°C ≤ T
J
≤ 125°C. Typical specifications are at 25°C.
CONTROLLER SECTION ONLY
[V
SS
= RTN and V
DD
= V
DD1
] or [V
SS
= RTN = V
DD
], all voltages referred to [ARTN, COM]
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
C
V
C
rising ‘754 14.3 15 15.7
V
CUV
V
C
rising ‘756 8.7 9 9.3
UVLO V
Hysteresis ‘754
(1)
6.2 6.5 6.8
V
CUVH
Hysteresis ‘756
(1)
3.3 3.5 3.7
Operating current V
C
= 12 V, CTL = V
B
, R
DT
= 68.1 kΩ 0.7 0.92 1.2 mA
TPS23756, V
DD1
= 10.2 V, V
C
(0) = 0 V 50 85 175
TPS23756, V
DD1
= 35 V, V
C
(0) = 0 V 27 45 92
Bootstrap startup time,
t
ST
ms
C
VC
= 22 μF
TPS23754, V
DD1
= 19.2 V, V
C
(0) = 0 V 49 81 166
TPS23754, V
DD1
= 35 V, V
C
(0) = 0 V 44 75 158
TPS23754, V
DD1
= 19.2 V, V
C
= 13.9 V 1.7 3.4 5.5
Startup current source is I
VC
TPS23756, V
DD1
= 10.2 V, V
C
= 8.6 V 0.44 1.06 1.80 mA
TPS23754, TPS23756, V
DD1
= 48 V, V
C
= 0 V 2.7 4.8 6.8
V
B
Voltage 6.5 V ≤ V
C
≤ 18 V, 0 ≤ I
VB
≤ 5 mA 4.8 5.10 5.25 V
(1) The hysteresis tolerance tracks the rising threshold for a given device.
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