Datasheet

TPS2359

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SLUS792H –FEBRUARY 2008–REVISED MAY 2013

Detailed Description of Registers

Table 3. Register 0: Channel 12A Configuration (Read/Write)

BIT NAME DEFAULT DESCRIPTION

0 12ACL0 1 Clearing bit reduces 12A current limit and fast threshold by 5%.

1 12ACL1 1 Clearing bit reduces 12A current limit and fast threshold by 10%.

2 12ACL2 1 Clearing bit reduces 12A current limit and fast threshold by 20%.

3 12ACL3 1 Clearing bit reduces 12A current limit and fast threshold by 40%.

4 12APG0 1 Clearing bit reduces 12A power good threshold by 600 mV.

5 12APG1 1 Clearing bit reduces 12A power good threshold by 1.2 V.

6 12AHP 0 Setting bit shifts 12A OR VTURNOFF from –3 mV to +3 mV nominal.

7 12AOR 1 Clearing bit turns off 12A ORing FET by pulling BLKA low.

12ACL[3:0] These four bits adjusts the 12A current limit and fast trip threshold using the I

C interface. Setting

the bits to 1111B places the 12A current limit at its maximum level, corresponding to 675 mV at SUM12A. The

fast trip threshold then equals 100 mV. Clearing all bits reduces the current limit and fast trip threshold to 25% of

these maximums.

12APG[1:0] These two bits adjust the 12A power good threshold. Setting the bits to 11B places the power good

threshold at its maximum level of 10.5 V . Setting the bits to 00B places the threshold at its minimum level of 8.7

V. The lower thresholds may prove desirable in systems that routinely experience large voltage droops.

12AHP Setting this bit moves the 12A ORing turn off threshold from –3 mV to +3 mV. A positive threshold

prevents reverse current from flowing through the channel, but it may cause the ORing FET to repeatedly cycle

on-and-off if the load cannot maintain the required positive voltage drop across the combined resistance of the

external FETs and the sense resistor. For further information, see Adjusting Oring Turn Off threshold For High

Power Loads section

12AOR Clearing this bit forces the BLKA pin low, keeping the 12A ORing FET off. Clearing this bit does not

prevent current from flowing through the FET’s body diode.

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