Datasheet

VREG
0.1 µF
IN ISET
R
ISET
ISENSE
R
SENSE
GATE
DISCH VSENSE
R
VSENSE_TOP
R
VSENSE_BOTTOM
+
FAULT
PWRGD
FAULT
PWRGD
TIMER
ENABLE
DGND
AGND
V
O
ENABLE
1 µF ∼ 10 µF
3 V ∼ 13 V IN
TPS2331
System Board
TPS2330
TPS2331
SLVS277G –MARCH 2000–REVISED JULY 2013 www.ti.com
APPLICATION INFORMATION
This diagram shows a typical dual hot-swap application. The pullup resistors at PWRGD and FAULT should be
relatively large (e.g. 100 kΩ) to reduce power loss unless they are required to drive a large load.
Figure 18. Typical Hot-Swap Application
INPUT CAPACITOR
A 0.1-μF ceramic capacitor in parallel with a 1-μF ceramic capacitor should be placed on the input power
terminals near the connector on the hot-plug board to help stabilize the voltage rails on the cards. There is no
need to mount the TPS2330/31 near the connector or these input capacitors. For applications with more severe
power environments, a 2.2-μF or higher ceramic capacitor is recommended near the input terminals of the hot-
plug board. A bypass capacitor for IN should be placed close to the device.
OUTPUT CAPACITOR
A 0.1-μF ceramic capacitor is recommended per load on the TPS2330/31; these capacitors should be placed
close to the external FETs and to TPS2330/31. A larger bulk capacitor on the load is also recommended. The
value of the bulk capacitor should be selected based on the power requirements and the transients generated by
the application.
EXTERNAL FET
To deliver power from the input sources to the loads, the controller needs an external N-channel MOSFET. A few
widely used MOSFETs are shown in Table 3. But many other MOSFETs on the market can also be used with
the TPS23xx in hot-swap systems.
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