Datasheet

TPS2300
TPS2301
www.ti.com SLVS265H –FEBRUARY 2000–REVISED JULY 2013
RECOMMENDED OPERATING CONDITIONS
MIN NOM MAX UNIT
V
I(IN1)
, V
I(ISENSE1)
, V
I(VSENSE1)
, V
I(VSENSE2)
, V
I(ISET1)
3 13
V
I(IN2)
, V
I(ISENSE2)
, V
I(ISET2)
, V
I(VREG)
3 5.5
V
I
Input voltage V
V
I(ISENSE1)
, V
I(ISET1)
, V
I(VSENSE1)
V
I(IN1)
V
I(ISENSE2)
, V
I(ISET2)
, V
I(VSENSE2)
V
I(IN2)
T
J
Operating virtual junction temperature –40 100 °C
ELECTRICAL CHARACTERISTICS
over recommended operating temperature range (–40°C < T
A
< 85°C), 3 V ≤ V
I(IN1)
≤13 V, 3 V ≤ V
I(IN2)
≤ 5.5 V (unless
otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GENERAL
I
I(IN1)
Input current, IN1 V
I(ENABLE)
= 5 V (TPS2301), 0.5 1 mA
I
I(IN2)
Input current, IN2 V
I(ENABLE)
= 0 V (TPS2300) 75 200 µA
Standby current (sum of
currents into IN1, IN2, V
I(ENABLE)
= 0 V (TPS2301),
I
I(stby)
5 µA
ISENSE1, ISENSE2, V
I(ENABLE)
= 5 V (TPS2300)
ISET1, and ISET2)
GATE1
V
G(GATE1_3V)
V
I(IN1)
= 3 V 9 11.5
I
I(GATE1)
= 500 nA,
V
G(GATE1_4.5V)
Gate voltage V
I(IN1)
= 4.5 V 10.5 14.5 V
DISCH1 open
V
G(GATE1_10.8V)
V
I(IN1)
= 10.8 V 16.8 21
Clamping voltage, GATE1
V
C(GATE1)
9 10 12 V
to DISCH1
3 V ≤ V
I(IN1)
≤ 13.2 V, 3 V ≤ V
O(VREG)
≤ 5.5 V,
I
S(GATE1)
Source current, GATE1 10 14 20 μA
V
I(GATE1)
= V
I(IN1)
+ 6 V
3 V ≤ V
I(IN1)
≤ 13.2 V, 3 V ≤ V
O(VREG)
≤ 5.5 V,
Sink current, GATE1 50 75 100 µA
V
I(GATE1)
= V
I(IN1)
V
I(IN1)
= 3 V 0.5
t
r(GATE1)
Rise time, GATE1 C
g
to GND = 1 nF
(1)
V
I(IN1)
= 4.5 V 0.6 ms
V
I(IN1)
= 10.8 V 1
V
I(IN1)
= 3 V 0.1
t
f(GATE1)
Fall time, GATE1 C
g
to GND = 1 nF
(1)
V
I(IN1)
= 4.5 V 0.12 ms
V
I(IN1)
= 10.8 V 0.2
GATE2
V
G(GATE2_3V)
V
I(IN2)
= 3 V 9 11.7
I
I(GATE2)
= 500 nA,
Gate voltage V
DISCH2 open
V
G(GATE2_4.5V)
V
I(IN2)
= 4.5 V 10.5 14.7
Clamping voltage, GATE2
V
C(GATE2)
9 10 12 V
to DISCH2
3 V ≤ V
I(IN2)
≤ 5.5 V, 3 V ≤ V
O(VREG)
≤ 5.5 V,
I
S(GATE2)
Source current, GATE2 10 14 20 µA
V
I(GATE2)
= V
I(IN2)
+ 6 V
3 V ≤ V
I(IN2)
≤ 5.5 V, 3 V ≤ V
O(VREG)
≤ 5.5 V,
Sink current, GATE2 50 75 100 µA
V
I(GATE2)
= V
I(IN2)
V
I(IN2)
= 3 V 0.5
t
r(GATE2)
Rise time, GATE2 C
g
to GND = 1 nF
(1)
ms
V
I(IN2)
= 4.5 V 0.6
V
O(VREG)
= 3 V
V
I(IN2)
= 3 V 0.1
t
f(GATE2)
Fall time, GATE2 C
g
to GND = 1 nF
(1)
ms
V
I(IN2)
= 4.5 V 0.12
(1) Specified, but not production tested.
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