Datasheet

VREG
0.1 µF
IN1 ISET1
R
ISET1
ISENSE1
R
SENSE1
GATE1
DISCH1 VSENSE1
R
VSENSE1_TOP
R
VSENSE1_BOTTOM
+
FAULT
V
O1
or
V
O2
FAULT
PWRGD1
TIMER
IN2 ISET2 ISENSE2 GATE2 DISCH2 VSENSE2
ENABLE
DGND
AGND
R
ISET2
R
VSENSE2_TOP
R
VSENSE2_BOTTOM
+
V
O1
V
O2
ENABLE
1 µF 10 µF
R
SENSE2
1 µF 10 µF
3 V 12 V IN1
3 V 5 V IN2
TPS2301
System Board
PWRGD2
PWRGD1
PWRGD2
TPS2300
TPS2301
www.ti.com
SLVS265H FEBRUARY 2000REVISED JULY 2013
APPLICATION INFORMATION
TYPICAL APPLICATION DIAGRAM
This diagram shows a typical dual hot-swap application. The pullup resistors at PWRGD1, PWRGD2 and FAULT
should be relatively large (e.g., 100 k) to reduce power loss unless they are required to drive a large load.
Figure 27. Typical Dual Hot-Swap Application
INPUT CAPACITOR
A 0.1-μF ceramic capacitor in parallel with a 1-μF ceramic capacitor should be placed on the input power
terminals near the connector on the hot-plug board to help stabilize the voltage rails on the cards. The
TPS2300/01 does not need to be mounted near the connector or these input capacitors. For applications with
more severe power environments, a 2.2-μF or higher ceramic capacitor is recommended near the input terminals
of the hot-plug board. A bypass capacitor for IN1 and for IN2 should be placed close to the device.
OUTPUT CAPACITOR
A 0.1-μF ceramic capacitor is recommended per load on the TPS2300/01; these capacitors should be placed
close to the external FETs and to TPS2300/01. A larger bulk capacitor is also recommended on the load. The
value of the bulk capacitor should be selected based on the power requirements and the transients generated by
the application.
EXTERNAL FET
To deliver power from the input sources to the loads, each channel needs an external N-channel MOSFET. A
few widely used MOSFETs are shown in Table 3. But many other MOSFETs in the market can also be used with
TPS23xx in hot-swap systems.
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