Datasheet

Exposed
Pad
(Connect to GND)
15 14 13 12 11
1 2 3 4 5
10
9
8
7
6
16
17
18
19
20
ISET_S0
ISET_S3
ISET_V3P3
VHV
VHV
V3P3
RSVD
S0
V3P3OUT
V3P3
GND
OUT GND
OUT
HV_EN
GND
GND GND
EN
Exposed
Pad
(Connect to GND)
1 2 3 4 5
15 14 13 12 11
6
7
8
9
10
20
19
18
17
16
VHV
VHV
ISET_V3P3
ISET_S3
ISET_S0
RSVD
V3P3
V3P3
V3P3OUT
S0
RSVD
GND
GND GND
GND
EN
OUT
GND
OUT
HV_EN
BOTTOM VIEW
TOP VIEW / FOOTPRINT
RSVD
TPS22980
SLVSB61C –DECEMBER 2011–REVISED SEPTEMBER 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Package Size: 4mm x 4mm x 1mm height, Pad Pitch: 0.5mm
PIN FUNCTIONS
PIN
DESCRIPTION
NO. NAME
1
2
GND Device ground
3
4
5 EN Device Enable.
6
VHV High voltage power supply input. Place a minimum of 0.1µF capacitor as close to this pin as possible.
7
Sets the current limit for V3P3. Place resistor between this pin and GND. See Equation 1 to calculate resistor
8 ISET_V3P3
value.
Sets the current limit for VHV in S3 mode. Place resistor between this pin and GND. See Equation 1 to
9 ISET_S3
calculate resistor value.
Sets the current limit for VHV in S0 mode. Place resistor between this pin and GND. See Equation 1 to
10 ISET_S0
calculate resistor value.
11 HV_EN High voltage output enable.
12, 14 OUT Power output. Place a minimum of 1µF capacitor as close to this pin as possible.
13 GND Device ground.
15
RSVD Reserved. Must Tie to GND.
16
17 S0 When this pin is asserted, the device is put in S0 mode. Otherwise the device operates in S3 mode.
18 V3P3OUT 3.3V bypass output. Place a minimum of 0.1µF capacitor as close to this pin as possible.
19
V3P3 3.3V power supply input. Place a minimum of 0.1µF capacitor as close to this pin as possible.
20
EP GND
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