Datasheet

V
OUT
V
IN
I
REVERSE _CURRENT
I
RC
I
RCP
(leak)
V
RCP
RCP
RC
ON(VIN)
V
I
r
=
TPS22910A
,
TPS22912C
,
TPS22913B
,
TPS22913C
SLVSB49D NOVEMBER 2011 REVISED MAY 2014
www.ti.com
Feature Description (continued)
10.3.3 Full-Time Reverse Current Protection
In a scenario where V
OUT
is greater than V
IN
, there is potential for reverse current to flow through the pass FET
or the body diode. The devices monitor VIN and VOUT voltage levels. When the reverse current voltage
threshold (V
RCP
) is exceeded, the switch is disabled (within 10μs typ). Additionally, the body diode is disengaged
so as to prevent any reverse current flow to VIN. The pass FET, and the output voltage (V
OUT
), will resume
normal operation when the reverse current scenario is no longer present. The peak instantaneous reverse
current is the current it takes to trip the reverse current protection. After the reverse current protection has tripped
due to the peak instantaneous reverse current, the DC (off-state) leakage current from VOUT and VIN is referred
to as I
RCP
(leak) (see Figure 48).
Use the following formula to calculate the amount of peak instantaneous reverse current for a particular
application:
Where,
I
RC
is the amount of reverse current,
r
ON(VIN)
is the on-resistance at the VIN of the reverse current condition.
V
RCP
is the reverse voltage threshold.
Figure 48. Reverse Current
10.4 Device Functional Modes
Table 2 describes what the VOUT pin will be connected to for a particular device as determined by the ON pin
Table 2. VOUT Function Table
ON TPS22910A TPS22912C TPS22913B/C
L VIN Open GND
H Open VIN VIN
20 Submit Documentation Feedback Copyright © 2011–2014, Texas Instruments Incorporated
Product Folder Links: TPS22910A TPS22912C TPS22913B TPS22913C