Datasheet

ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
TPS22906
SLVS921 – MARCH 2009 ................................................................................................................................................................................................... www.ti.com
V
IN
= 1.0 V to 3.6 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER TEST CONDITIONS T
A
MIN TYP
(1)
MAX UNIT
V
IN
= 1.1 V Full 37 120
I
IN
Quiescent current I
OUT
= 0, V
IN
= V
ON
V
IN
= 1.8 V Full 82 235 nA
V
IN
= 3.6 V Full 204 880
V
IN
= 1.1 V Full 22 210
I
IN(OFF)
OFF-state supply current V
ON
= GND, OUT = Open V
IN
= 1.8 V Full 44 260 nA
V
IN
= 3.6 V Full 137 700
V
IN
= 1.1 V Full 22 140
I
IN(LEAKAGE)
OFF-state switch current V
ON
= GND, V
OUT
= 0 V
IN
= 1.8 V Full 45 230 nA
V
IN
= 3.6 V Full 137 610
25 ° C 90 108
V
IN
= 3.6 V
Full 125
25 ° C 100 120
V
IN
= 2.5 V
Full 140
25 ° C 114 138
r
ON
ON-state resistance I
OUT
= - 200 mA V
IN
= 1.8 V m Ω
Full 160
25 ° C 172 210
V
IN
= 1.2 V
Full 235
25 ° C 204 330
V
IN
= 1.1 V
Full 330
r
PD
Output pulldown resistance V
IN
= 3.3 V, V
ON
= 0, I
OUT
= 30 mA 25 ° C 88 120 Ω
I
ON
ON input leakage current V
ON
= 1.1 V to 3.6 V or GND Full 25 nA
(1) Typical values are at the specified V
IN
and T
A
= 25 ° C.
V
IN
= 1.1 V, T
A
= 25 ° C , RL_CHIP = 120 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
C
L
= 0.1 µ F 531
t
ON
Turn-ON time R
L
= 500 Ω C
L
= 1 µ F 596 µ s
C
L
= 3.3 µ F 659
C
L
= 0.1 µ F 11
t
OFF
Turn-OFF time R
L
= 500 Ω C
L
= 1 µ F 67 µ s
C
L
= 3.3 µ F 225
C
L
= 0.1 µ F 365
t
r
V
OUT
rise time R
L
= 500 Ω C
L
= 1 µ F 367 µ s
C
L
= 3.3 µ F 395
C
L
= 0.1 µ F 21
t
f
V
OUT
fall time R
L
= 500 Ω C
L
= 1 µ F 189 µ s
C
L
= 3.3 µ F 565
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