Datasheet
TPS2231
TPS2236
www.ti.com
.................................................................................................................................................. SLVS536J –JULY 2004–REVISED SEPTEMBER 2009
DISSIPATION RATINGS (Thermal Resistance = °C/W)
T
A
≤ 25°C DERATING FACTOR T
A
= 70°C T
A
= 85°C
PACKAGE
POWER RATING ABOVE T
A
= 25°C POWER RATING POWER RATING
PW (20)
(1)
704.2 mW 7.41 mW/°C 370.6 mW 259.5 mW
PWP (24)
(1)
3153 mW 33.19 mW/°C 1659.5 mW 1161.6 mW
RGP (20)
(2)
3277.5 mW 34.5 mW/°C 1725 mW 1207.3 mW
DAP (32)
(1)
993.4 mW 10.46 mW/°C 522.8 mW 366 mW
PowerPAD not soldered down
DAP (32)
(1)
4040.8 mW 42.55 mW/°C 2126.8 mW 1488.7 mW
(1) These devices are mounted on an JEDEC low-k board (2-oz. traces on surface), (The table is assuming that the maximum junction
temperature is 120°C). The power pad on the device must be soldered down to the power pad on the board if best thermal performance
is needed.
(2) This device is mounted on a JEDEC JESO51.5 high-k board (2 signal, 2 plane). The values assume a maximum junction temperature of
120°C.
RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
V
I(3.3VIN)
3.3VIN is only required for its respective functions 3 3.6
V
I(1.5VIN)
Input voltage 1.5VIN is only required for its respective functions 1.35 1.65 V
V
I(AUXIN)
AUXIN is required for all circuit operations 3 3.6
I
O(3.3VOUT)
0 1.3 A
I
O(1.5VOUT)
Continuous output current T
J
= 120°C 0 650 mA
I
O(AUXOUT)
0 275 mA
T
J
Operating virtual junction temperature –40 120 °C
ELECTRICAL CHARACTERISTICS
T
J
= 25°C, V
I(3.3VIN)
= V
I(AUXIN)
= 3.3 V, V
I(1.5VIN)
= 1.5 V, V
I(/SHDNx)
, V
I(/STBYx)
= 3.3 V, V
I(/CPPEx)
= V
I(/CPUSBx)
= 0 V,
V
I(/SYSRST)
= 3.3 V, OCx and RCLKENx and PERSTx are open, all voltage outputs unloaded (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SWITCH
T
J
= 25°C, I = 1300 mA each 45
3.3VIN to 3.3VOUT with two switches
mΩ
on for dual
T
J
= 100°C, I = 1300 mA each 68
T
J
= 25°C, I = 650 mA each 46
Power switch 1.5VIN to 1.5VOUT With two switches
mΩ
resistance on for dual
T
J
= 100°C, I = 650 mA each 70
T
J
= 25°C, I = 275 mA each 120
AUXIN to AUXOUT with two switches
mΩ
on for dual
T
J
= 100°C, I = 275 mA each 200
R
(DIS_FET)
Discharge resistance on 3.3V/1.5V/AUX outputs V
I(/SHDNx)
= 0 V, I
(discharge)
= 1 mA 100 500 Ω
I
OS(3.3VOUT)
(steady-state value) 1.35 2 2.5 A
Short-circuit
I
OS
I
OS(1.5VOUT)
(steady-state value) T
J
(–40, 120°C]. Output powered into a short 0.67 1 1.3 A
output current
(1)
I
OS(AUXOUT)
(steady-state value) 275 450 600 mA
Rising temperature, not in overcurrent condition 155 165
Trip point, T
J
°C
Thermal
Overcurrent condition 120 130
shutdown
Hysteresis 10
V
O(3.3VOUT)
with 100-mΩ short 43 100
V
O(1.5VOUT)
with 100-mΩ short, TPS2231 100 140
Current-limit
From short to the 1
st
threshold within 1.1
μs
response time
times of final current limit, T
J
= 25°C
V
O(1.5VOUT)
with 100-mΩ short, TPS2236 110 150
V
O(AUXOUT)
with 100-mΩ short 38 100
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
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