Datasheet

 
 
SLVS333 − AUGUST 2001
6
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electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V
I(VIN/SWIN1)
≤ 5.5 V, 2.9 V ≤ V
I(SWIN2)
≤ 5.5 V, V
I(ENx)
= 0 V or V
I(ENx)
= 5 V,
V
I(LDO_EN)
= 5 V, C
L(LDO_OUT)
= 10 µF, T
J
= −40°C to 100°C (unless otherwise noted) (continued)
adjustable voltage regulator (Vx = 1 V to 3.3 V)
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
V
O
Output voltage, dc (see Note 2)
V
I(VIN/SWIN1)
=Vx + 0.6 V to 5.5 V and
V
I(VIN/SWIN1)
> 2.9 V,
I
O
= 0.5 mA to 200 mA
0.97Vx Vx 1.03Vx V
Dropout voltage (VIN/SWIN1 to LDO_OUT) V
I(VIN/SWIN1)
= Vx − 0.1 V, I
O
= 200 mA 0.5 V
Line regulation voltage (see Note 1)
V
I(VIN/SWIN1)
= Vx + 0.6 V to 5.5 V and
V
I(VIN/SWIN1)
> 2.9 V,
I
O
= 5 mA
0.1 %/V
Load regulation voltage (see Note 1)
V
I(VIN/SWIN1)
= Vx + 0.6 V to 5.5 V and
V
I(VIN/SWIN1)
> 2.9 V,
I
O
= 5 mA to 200 mA
0.4% 1%
I
OS
Short-circuit current limit
V
I(VIN/SWIN1)
= Vx + 0.6 V to 5.5 V and
V
I(VIN/SWIN1)
> 2.9 V,
LDO_OUT connected to GND
0.275 0.33 0.575 A
I
lkg(R)
Reverse leakage current into LDO_OUT
V
O(LDO_OUT)
= Vx,
V
I(VIN/SWIN1)
= 0 V,
V
I(LDO_EN)
= 0 V
10 µA
I
lkg(R)
Reverse leakage current into LDO_OUT
V
O(LDO_OUT)
= 5.5 V,
V
I(VIN/SWIN1)
= 2.8 V,
V
I(LDO_EN)
= 0 V
10 µA
t
on
Turnoff time, LDO_EN
transitioning low (see Note 1)
From 50% LDO_EN to 10% LDO_OUT,
R
L
= Vx/0.2 Ω, C
L(LDO_OUT)
= 10 µF
0.1 1 ms
t
off
Turnon time, LDO_EN
transitioning high (see Note 1)
From 50% LDO_EN to 90% LDO_OUT,
R
L
= Vx/0.2 Ω, C
L(LDO_OUT)
= 10 µF
0.1 1 ms
Ramp-up time, LDO_OUT (0% to 90%)
V
I(LDO_EN)
= 5 V, VIN/SWIN1 ramping up
from 10% to 90% in 0.1 ms, R
L
= Vx/0.2 Ω,
C
L(LDO_OUT)
= 10 µF
0.1 1 ms
Output tracking
OUT1 lag time from LDO_OUT given
LDO_EN and EN1 have been asserted si-
multaneously to turnon their respective out-
puts. Measured at 1 V. (see Note 1)
LDO load R
L
= Vx/0.2 Ω,
C
L(LDO_OUT)
= 10 µF,
OUT1 R
L
= 33 Ω, 10 µF,
V
I(VIN/SWIN1)
= 3.3 V
0 1 ms
Power supply rejection
f = 1 kHz, C
L(LDO_OUT)
= 4.7 µF,
ESR = 0.25 Ω, IO = 5 mA,
V
I(VIN/SWIN1)p−p
= 100 mV
50 dB
†
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
NOTES: 1. Specified by design, not tested in production.
2. Does not include error introduced by external resistive divider R1, R2 tolerance.