Datasheet

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 
SLVS333 − AUGUST 2001
5
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electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V
I(VIN/SWIN1)
≤ 5.5 V, 2.9 V ≤ V
I(SWIN2)
≤ 5.5 V, V
I(ENx)
= 0 V or V
I(ENx)
= 5 V,
V
I(LDO_EN)
= 5 V, T
J
= −40°C to 100°C (unless otherwise noted) (continued)
undervoltage lockout at SWIN2
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
UVLO Threshold 2.2 2.85 V
Hysteresis (see Note 1) 260 mV
Deglitch (see Note 1) 50 µs
NOTE 1. Specified by design, not tested in production.
electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V
I(VIN/SWIN1)
≤ 5.5 V, 2.9 V ≤ V
I(SWIN2)
≤ 5.5 V, V
I(ENx)
= 0 V or V
I(ENx)
= 5 V,
V
I(LDO_EN)
= 5 V, C
L(LDO_OUT)
= 10 µF, T
J
= −40°C to 100°C (unless otherwise noted)
fixed-voltage regulator, 3.3 V
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
V
O
Output voltage, dc
V
I(VIN/SWIN1)
= 4.25 V to 5.25 V,
I
O(LDO_OUT)
= 0.5 mA to 200 mA
3.20 3.3 3.40 V
Dropout voltage
V
I(VIN/SWIN1)
= 3.2 V,
I
O(LDO_OUT)
= 200 mA,
0.35
V
Dropout voltage
I(VIN/SWIN1)
I
O(LDO_OUT)
= 200 mA,
I
O(OUT1)
= 150 mA
0.35 V
Line regulation voltage (see Note 1)
V
I(VIN/SWIN1)
= 4.25 V to 5.25 V,
I
O(LDO_OUT)
= 5 mA
0.1 %/V
Load regulation voltage (see Note 1)
V
I(VIN/SWIN1)
= 4.25 V,
I
O(LDO_OUT)
= 5 mA to 200 mA
0.4% 1.15%
I
OS
Short-circuit current limit
V
I(VIN/SWIN1)
= 4.25 V,
LDO_OUT connected to GND
0.275 0.33 0.55 A
I
lkg(R)
Reverse leakage current into
LDO_OUT
V
O(LDO_OUT)
= 3.3 V,
V
I(VIN/SWIN1)
= 0 V,
V
I(LDO_EN)
= 0 V
10 µA
I
lkg(R)
Reverse leakage current into
LDO_OUT
V
O(LDO_OUT)
= 5.5 V,
V
I(VIN/SWIN1)
= 2.9 V,
V
I(LDO_EN)
= 0 V
10 µA
t
on
Turnoff time, LDO_EN
transitioning low (see Note 1)
R
L
= 16 Ω, C
L(LDO_OUT)
= 10 µF 0.25 1 ms
t
off
Turnon time, LDO_EN
transitioning high (see Note 1)
R
L
= 16 Ω, C
L(LDO_OUT)
= 10 µF 0.1 1 ms
Ramp-up time, LDO_OUT (0% to 90%)
V
I(LDO_EN)
= 5 V, VIN/SWIN1 ramping up from 10%
to 90% in 0.1 ms, R
L
= 16 Ω,
C
L(LDO_OUT)
= 10 µF
0.1 1 ms
Power supply rejection
f = 1 kHz, C
L(LDO_OUT)
= 4.7 µF,
ESR = 0.25 Ω, IO = 5 mA,
V
I(VIN/SWIN1)p−p
= 100 mV
50 dB
†
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
NOTE 1. Specified by design, not tested in production.