Datasheet

 
 
SLVS333 − AUGUST 2001
4
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electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V
I(VIN/SWIN1)
≤ 5.5 V, 2.9 V ≤ V
I(SWIN2)
≤ 5.5 V, V
I(ENx)
= 0 V or V
I(ENx)
= 5 V,
V
I(LDO_EN)
= 5 V, T
J
= −40°C to 100°C (unless otherwise noted)
power switches
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
r
DS(on)
Static drain-source on-state resistance,
T
J
= −40°C to 100°C,
I
O(LDO_OUT)
= 200 mA,
IOUT1 and IOUT2 = 150 mA
580
mΩ
r
DS(on
)
Static drain-source on-state resistance,
VIN/SWIN1 or SWIN2 to OUTx
T
J
= 25°C,
I
O(LDO_OUT)
= 200 mA,
IOUT1 and IOUT2 = 150 mA
340
mΩ
V
I(ENx
)
= 5 V,
V
I(ENx)
= 0 V,
SWIN2 floating,
V
I(VIN/SWIN1)
= 5 V
10
I
lkg(R)
Reverse leakage current at OUTx
V
O(OUTx)
= 5 V,
LDO_EN = don’t care
V
I(ENx
)
= 5 V,
V
I(ENx)
= 0 V,
V
I(SWIN2)
= 0,
V
I(VIN/SWIN1)
= 2.9 V
10
µA
V
I(ENx
)
= 5 V,
V
I(ENx)
= 0 V,
V
I(SWIN2)
= 0,
V
I(VIN/SWIN1)
= 0 V
10
I
OS
Short circuit output current
OUTx connected to GND, device enabled into short
circuit
0.2 0.4 A
Delay time for asserting OC flag From IOUTx at 95% of current limit level to 50% OC 5.5 ms
Delay time for deasserting OC flag From IOUTx at 95% of current limit level to 50% OC 10.5 ms
timing parameters, power switches
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
on
Turnon time, OUTx switch, (see Note 1)
C
L
= 100 µF
R
L
= 33 Ω
0.5 6
t
on
Turnon time, OUTx switch, (see Note 1)
C
L
= 1 µF
R
L
= 33 Ω
0.1 3
t
off
Turnoff time, OUTx switch (see Note 1)
C
L
= 100 µF
R
L
= 33 Ω
5.5 12
ms
t
off
Turnoff time, OUTx switch (see Note 1)
C
L
= 1 µF
R
L
= 33 Ω
0.05 4
ms
t
r
Rise time, OUTx switch (see Note 1)
C
L
= 100 µF
R
L
= 33 Ω
0.5 5
t
r
Rise time, OUTx switch (see Note 1)
C
L
= 1 µF
R
L
= 33 Ω
0.1 2
t
f
Fall time, OUTx switch (see Note 1)
C
L
= 100 µF
R
L
= 33 Ω
5.5 9
t
f
Fall time, OUTx switch (see Note 1)
C
L
= 1 µF
R
L
= 33
Ω
0.05 1.2
NOTE 1. Specified by design, not tested in production.
undervoltage lockout at VIN/SWIN1
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
UVLO Threshold 2.2 2.85 V
Hysteresis (see Note 1) 260 mV
Deglitch (see Note 1) 50 µs
NOTE 1. Specified by design, not tested in production.