Datasheet

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
SLVS401 − AUGUST 2001
4
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electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V
I(VIN)
≤ 5.5 V, T
J
= −40°C to 100°C (unless otherwise noted)
timing parameters, power switches
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
on
Turnon time, OUTx switch, (see Note 1)
C
L
= 100 µF
R
L
= 33 Ω
0.5 6
t
on
Turnon time, OUTx switch, (see Note 1)
C
L
= 1 µF
R
L
= 33 Ω
0.1 3
t
off
Turnoff time, OUTx switch (see Note 1)
C
L
= 100 µF
R
L
= 33 Ω
5.5 10
ms
t
off
Turnoff time, OUTx switch (see Note 1)
C
L
= 1 µF
R
L
= 33 Ω
0.05 2
ms
t
r
Rise time, OUTx switch (see Note 1)
C
L
= 100 µF
R
L
= 33 Ω
0.5 5
t
r
Rise time, OUTx switch (see Note 1)
C
L
= 1 µF
R
L
= 33 Ω
0.1 2
t
f
Fall time, OUTx switch (see Note 1)
C
L
= 100 µF
R
L
= 33 Ω
5.5 9
t
f
Fall time, OUTx switch (see Note 1)
C
L
= 1 µF
R
L
= 33 Ω
0.05 1.2
NOTE 1. Specified by design, not tested in production.
undervoltage lockout at VIN
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
UVLO Threshold 2.2 2.85 V
Hysteresis (see Note 1) 260 mV
Deglitch (see Note 1) 50 µs
NOTE 1. Specified by design, not tested in production.
electrical characteristics over recommended operating junction-temperature range,
2.9 V ≤ V
I(VIN)
≤ 5.5 V, V
I(ENx)
= 0 V, V
I(LDO_EN)
= 5 V, C
L(LDO_OUT)
= 10 µF, T
J
= −40°C to 100°C
(unless otherwise noted)
3.3 V LDO
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
V
O
Output voltage, dc
V
I(VIN)
= 4.25 V to 5.25 V,
I
O(LDO_OUT)
= 0.5 mA to 200 mA
3.20 3.3 3.40 V
Dropout voltage
V
I(VIN)
= 3.2 V, I
O(OUT1)
= 150 mA,
I
O(LDO_OUT)
= 200 mA
0.35 V
Line regulation voltage (see Note 1) V
I(VIN)
= 4.25 V to 5.25 V, I
O(LDO_OUT)
= 5 mA 0.1 %/V
Load regulation voltage (see Note 1) V
I(VIN)
= 4.25 V, I
O(LDO_OUT)
= 5 mA to 200 mA 0.4 1%
I
OS
Short-circuit current limit V
I(VIN)
= 4.25 V, LDO_OUT connected to GND 0.275 0.33 0.55 A
I
lkg(R)
Reverse leakage current into
LDO_OUT
V
O(LDO_OUT)
= 3.3 V, V
I(IN)
= 0 V 10 µA
I
lkg(R)
Reverse leakage current into
LDO_OUT
V
O(LDO_OUT)
= 5.5 V, V
I(IN)
= 0 V
10 µA
Power supply rejection
f = 1 kHz, C
L(LDO_OUT)
= 4.7 µF, ESR = 0.25 Ω,
I
O
= 5 mA, V
INp−p
= 100 mV
50 dB
Ramp-up time, LDO_OUT (0% to 90%)
V
IN
ramping up from 10% to 90% in 0.1 ms,
R
L
= 16 Ω, C
L(LDO_OUT)
= 10 µF
0.1 1 ms
†
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
NOTES: 1. Specified by design, not tested in production.