Datasheet
SLVS399A − JANUARY 2002 − REVISED MAY 2006
10
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electrical characteristics over recommended operating junction temperature range,
V
I(SW_IN)
= 3.3 V for TPS2140/50, V
I(SW_IN)
= 5 V for TPS2141/51, V
I(LDO_IN)
= 5 V, all outputs unloaded
(unless otherwise noted) (continued)
logic section (SW_EN, SW_EN, LDO_EN, ADJ, SW_PG, LDO_PG)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
I(/SW_EN)
, source V
I(/SW_EN)
= 0 V 1 5
Logic input current
I
I(SW_EN)
, sink V
I(SW_EN)
= 5 V 1 5
µA
Logic input current
I
I(LDO_EN)
V
I(EN_LDO)
= 0 V – 5.5 V −1 1
µA
V
IH_MIN(/SW_EN)
2
Logic input high level
V
IH_MIN(SW_EN)
2
V
Logic input high level
V
IH_MIN(LDO_EN)
2
V
V
IL_MAX(/SW_EN)
0.8
Logic input low level
V
IL_MAX(SW_EN)
0.8
V
Logic input low level
V
IL_MAX(LDO_EN)
0.8
V
Floating input voltage
V
IF(/SW_EN)
SW_EN pin is open 2.5
V
Floating input voltage
V
IF(SW_EN)
SW_EN pin is open 0.4
V
LDO feedback input current I
I(ADJ)
V
I(ADJ)
= 0 V – 5.5 V −1 1 µA
SW_PG sense threshold, V
TH_SW
TPS2140, TPS2150
Percentage of V
I(SW_IN)
85%
88%
90%
SW_PG sense threshold, V
TH_SW
TPS2141, TPS2151
Percentage of V
I(SW_IN)
85%
88%
90%
LDO_PG sense threshold, V
TH_LDO
A percentage of output voltage set point
V
SET
, derived from a resistor divider
92% 94% 96%
PG hysteresis (all)
‡
V
TH_HYS
2% 2.5% 3.5%
SW_PG rising edge deglitch
‡
t
d_SWPG_rise
1 2.5 ms
PG falling edge deglitches times (all)
‡
t
d_PG_fail
50 150 µs
SW_PG minimum output high state
voltage
V
OH_MIN(SW_PG)
Source current I
O(SW_PG)
= 1 mA,
V
I(SW_OUT)
> V
TH_SW
V
I(SW_IN)
–0.5
SW_PG maximum output low state
voltage
V
OL_MAX(SW_PG)
Sink current I
O(SW_PG)
= 1 mA,
V
I(SW_OUT)
< V
TH_SW
0.5
V
LDO_PG maximum output low state
voltage
V
OH_MIN(LDO_PG)
Sink current I
O(SW_PG)
= 1 mA,
V
I(LDO_OUT)
< V
TH_LDO
0.5
LDO_PG leakage current I
LK(LDO_PG)
V
O(LDO_PG)
= 5.5 V 1 µA
‡
Not tested in production.
thermal shutdown characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Low thermal shutdown
Over temperature trip point
‡
Switch and/or LDO in current limit
125 137
°C
Low thermal shutdown
(whole device)
Hysteresis
‡
Switch and/or LDO in current limit
10
°C
High thermal shutdown
Over temperature trip point
‡
Switch and LDO are not in current limit
155 170
°C
High thermal shutdown
(whole device)
Hysteresis
‡
Switch and LDO are not in current limit
10
°C
‡
Not tested in production.