Datasheet
TPS2112A
TPS2113A
SBVS045C –MARCH 2004–REVISED MAY 2012
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ELECTRICAL CHARACTERISTICS (continued)
Over recommended operating junction temperature, I
O(OUT)
= 0 A, and R
ILIM
= 400 Ω, unless otherwise noted.
TPS2112A, TPS2113A
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY AND LEAKAGE CURRENTS, Continued
EN = High (inactive), V
I(IN1)
= 5.5 V,
0.5 2
V
I(IN2)
= 3.3 V
Quiescent current from IN1 (standby) μA
EN = High (inactive), V
I(IN1)
= 3.3 V,
1
V
I(IN2)
= 5.5 V
EN = High (inactive), V
I(IN1)
= 5.5 V,
1
V
I(IN2)
= 3.3 V
Quiescent current from IN2 (standby) μA
EN = High (inactive), V
I(IN1)
= 3.3 V,
0.5 2
V
I(IN2)
= 5.5 V
Forward leakage current from IN1 EN = High (inactive), V
I(IN1)
= 5.5 V, IN2 open,
0.1 5 μA
(measured from OUT to GND) V
O(OUT)
= 0 V (shorted), T
J
= 25°C
Forward leakage current from IN2 EN = High (inactive), V
I(IN2)
= 5.5 V, IN1 open,
0.1 5 μA
(measured from OUT to GND) V
O(OUT)
= 0 V (shorted), T
J
= 25°C
Reverse leakage current to INx (measured EN = High (inactive), V
I(INx)
= 0 V,
0.3 5 μA
from INx to GND) V
O(OUT)
= 5.5 V, T
J
= 25°C
STAT OUTPUT
Leakage current V
O(STAT)
= 5.5 V 0.01 1 μA
Saturation voltage I
I(STAT)
= 2 mA, IN1 switch is on 0.13 0.4 V
Deglitch time (falling edge only) 150 μs
CURRENT LIMIT CIRCUIT
R
ILIM
= 400 Ω 0.51 0.63 0.80
TPS2112A A
R
ILIM
= 700 Ω 0.30 0.36 0.50
Current limit accuracy
R
ILIM
= 400 Ω 0.95 1.25 1.56
TPS2113A A
R
ILIM
= 700 Ω 0.47 0.71 0.99
Time for short-circuit output current to settle
Current limit settling time t
d
1 ms
within 10% of its steady state value.
Input current at ILIM V
I(ILIM)
= 0 V –15 0 μA
VSNS COMPARATOR
V
I(VSNS)
↑ 0.78 0.80 0.82
VSNS threshold voltage V
V
I(VSNS)
↓ 0.735 0.755 0.775
VSNS comparator hysteresis 30 60 mV
Deglitch of VSNS comparator (both ↑ ↓ ) 90 150 220 μs
Input current 0 V ≤ V
I(VSNS)
≤ 5.5 V –1 1 μA
UVLO
Falling edge 1.15 1.25
IN1 and IN2 UVLO V
Rising edge 1.30 1.35
IN1 and IN2 UVLO hysteresis 30 57 65 mV
Falling edge 2.4 2.53
Internal V
DD
UVLO (the higher of IN1 and
V
IN2)
Rising edge 2.58 2.8
Internal V
DD
UVLO hysteresis 30 50 75 mV
UVLO deglitch for IN1, IN2 Falling edge 110 μs
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