Datasheet
RECOMMENDED OPERATING CONDITIONS
(1)
ELECTRICAL CHARACTERISTICS
TPS2062A
TPS2066A
www.ti.com
........................................................................................................................................... SLVS798F – JANUARY 2008 – REVISED NOVEMBER 2008
MIN MAX UNIT
Input voltage, IN 2.7 5.5 V
V
I
Input voltage, ENx, ENx 0 5.5 V
I
O
Continuous output current, OUTx 0 1 A
T
J
Operating virtual junction temperature – 40 125 ° C
(1) The PowePad must be connected externally to GND pin to meet qualifying conditions for CB Certificate (DRB package only)
over recommended operating junction temperature range, V
I
= 5.5 V, I
O
= 1 A, V
/ENx
= 0 V (TPS2062A) or V
ENx
= 5.5 V
(unless otherwise noted)
PARAMETER TEST CONDITIONS
(1)
MIN TYP MAX UNIT
POWER SWITCH
T
J
= 25 ° C 70 100
r
DS(on)
Static drain-source on-state resistance 2.7 V ≤ V
I
≤ 5.5 V, I
O
= 1 A m Ω
– 40 ° C ≤ T
J
≤ 125 ° C 135
V
I
= 5.5 V 0.6 1.5
t
r
Rise time, output
V
I
= 2.7 V 0.4 1
C
L
= 1 µ F,
ms
R
L
= 5 Ω , T
J
= 25 ° C
V
I
= 5.5 V 0.05 0.5
t
f
Fall time, output
V
I
= 2.7 V 0.05 0.5
ENABLE INPUT EN OR EN
V
IH
High-level input voltage 2
2.7 V ≤ V
I
≤ 5.5 V V
V
IL
Low-level input voltage 0.8
I
I
Input current -0.5 0.5 µ A
t
on
Turnon time 3
C
L
= 100 µ F, R
L
= 5 Ω ms
t
off
Turnoff time 3
CURRENT LIMIT
T
J
= 25 ° C 1.2 1.6 2.0
Short-circuit output current per V
I
= 5 V, OUTx connected to GND,
I
OS
A
channel device enabled into short-circuit
– 40 ° C ≤ T
J
≤ 125 ° C 1.1 1.6 2.1
I
OC
Overcurrent trip threshold V
IN
= 5 V I
OS
2.1 2.45 A
T
J
= 25 ° C 2.4 3.2 4.0
V
I
= 5 V, OUT1 & OUT2 connected to
I
OS_G
Ganged short-circuit output current
GND, device enabled into short-circuit
– 40 ° C ≤ T
J
≤ 125 ° C 2.2 3.2 4.2 A
I
OC_G
Ganged overcurrent trip threshold V
I
= 5 V, OUT1 & OUT2 tied together I
OS_G
4.2 4.9
SUPPLY CURRENT
T
J
= 25 ° C 0.5 1
I
IL
Supply current, device disabled No load on OUT µ A
– 40 ° C ≤ T
J
≤ 125 ° C 0.5 5
T
J
= 25 ° C 50 60
I
IH
Supply current, device enabled No load on OUT µ A
– 40 ° C ≤ T
J
≤ 125 ° C 50 75
I
lkg
Leakage current, device disabled OUT connected to ground – 40 ° C ≤ T
J
≤ 125 ° C 1 µ A
Reverse leakage current V
O
= 5.5 V, V
I
= 0 V T
J
= 25 ° C 0.2 µ A
UNDERVOLTAGE LOCKOUT
Low-level input voltage, IN V
I
rising 2 2.5 V
Hysteresis, IN V
I
falling 75 mV
OVERCURRENT FLAG
V
OL
Output low voltage, OC I
/OCx
= 5 mA 0.4 V
Off-state current V
/OCx
= 5.0 V or 3.3 V 1 µ A
OC deglitch OCx assertion or de-assertion 4 8 15 ms
THERMAL SHUTDOWN
(2)
Thermal shutdown threshold 135 ° C
Recovery from thermal shutdown 125 ° C
Hysteresis 10 ° C
(1) Pulsed load testing used to maintain junction temperature close to ambient
(2) The thermal shutdown only reacts under overcurrent conditions.
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