Datasheet
www.ti.com
ELECTRICAL CHARACTERISTICS
TPS2010A, TPS2011A
TPS2012A, TPS2013A
SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007
over recommended operating junction temperature range, V
I(IN)
= 5.5 V, I
O
= rated current, EN = 0 V (unless otherwise noted)
PARAMETER TEST CONDITIONS
(1)
MIN TYP MAX UNIT
POWER SWITCH
V
I(IN)
= 5 V, T
J
= 25 ° C, I
O
= 1.5 A 33 36
V
I(IN)
= 5 V, T
J
= 85 ° C, I
O
= 1.5 A 38 46
V
I(IN)
= 5 V, T
J
= 125 ° C, I
O
= 1.5 A 44 50
TPS2013A m Ω
V
I(IN)
= 3.3 V, T
J
= 25 ° C, I
O
= 1.5 A 37 41
V
I(IN)
= 3.3 V, T
J
= 85 ° C, I
O
= 1.5 A 43 52
V
I(IN)
= 3.3 V, T
J
= 125 ° C, I
O
= 1.5 A 51 61
Static drain-source on-state
r
DS(on)
resistance
V
I(IN)
= 5 V, T
J
= 25 ° C, I
O
= 0.18 A 30 34
V
I(IN)
= 5 V, T
J
= 85 ° C, I
O
= 0.18 A 35 41
V
I(IN)
= 5 V, T
J
= 125 ° C, I
O
= 0.18 A 39 47
TPS2010A m Ω
V
I(IN)
= 3.3 V, T
J
= 25 ° C, I
O
= 0.18 A 33 37
V
I(IN)
= 3.3 V, T
J
= 85 ° C, I
O
= 0.18 A 39 46
V
I(IN)
= 3.3 V, T
J
= 125 ° C, I
O
= 0.18 A 44 56
V
I(IN)
= 5.5 V, T
J
= 25 ° C, C
L
= 1 μ F, R
L
= 10 Ω 6.1
t
r
Rise time, output ms
V
I(IN)
= 2.7 V, T
J
= 25 ° C, C
L
= 1 μ F, R
L
= 10 Ω 8.6
V
I(IN)
= 5.5 V, T
J
= 25 ° C, C
L
= 1 μ F, R
L
= 10 Ω 3.4
t
f
Rise time, output ms
V
I(IN)
= 2.7 V, T
J
= 25 ° C, C
L
= 1 μ F, R
L
= 10 Ω 3
ENABLE INPUT ( EN)
V
IH
High-level input voltage 2.7 V ≤ V
I(IN)
≤ 5.5 V 2 V
4.5 V ≤ V
I(IN)
≤ 5.5 V 0.8
V
IL
Low-level input voltage V
2.7 V ≤ V
I(IN)
≤ 4.5 V 0.5
I
I
Input current EN = 0 V or EN = V
I(IN)
– 0.5 0.5 μ A
t
on
Turnon time C
L
= 100 μ F, R
L
= 10 Ω 20 ms
t
off
Turnoff time C
L
= 100 μ F, R
L
= 10 Ω 40 ms
CURRENT LIMIT
TPS2010A 0.22 0.3 0.4
T
J
= 25 ° C, V
I
= 5.5 V,
TPS2011A 0.66 0.9 1.1
I
OS
Short-circuit output current OUT connected to GND, A
TPS2012A 1.1 1.5 1.8
Device enable into short circuit
TPS2013A 1.65 2.2 2.7
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
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Product Folder Link(s): TPS2010A, TPS2011A TPS2012A, TPS2013A