Datasheet
TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics over recommended operating junction temperature range, V
I(IN)
= 5.5 V,
I
O
= rated current, EN = 0 V (unless otherwise noted) (continued)
supply current
PARAMETER TEST CONDITIONS
TPS2010, TPS2011
TPS2012, TPS2013
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
Su
pp
ly current low level out
p
ut
EN V
I(IN)
T
J
= 25°C 0.015 1
µA
S
u
ppl
y
c
u
rrent
,
lo
w-
le
v
el
o
u
tp
u
t
EN
=
V
I(IN)
–40°C ≤ T
J
≤ 125°C 10
µ
A
Su
pp
ly current high level out
p
ut
EN =0V
T
J
= 25°C 73 100
µA
S
u
ppl
y
c
u
rrent
,
high
-
le
v
el
o
u
tp
u
t
EN
=
0
V
–40°C ≤ T
J
≤ 125°C 100
µ
A
electrical characteristics over recommended operating junction temperature range, V
I(IN)
= 5.5 V,
I
O
= rated current, EN = 0 V, T
J
= 25°C (unless otherwise noted)
power switch
PARAMETER
TEST CONDITIONS
†
TPS2010Y, TPS2011Y
TPS2012Y, TPS2013Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
V
I(IN)
= 5.5 V, 75
On state resistance
V
I(IN)
= 4.5 V, 80
mΩ
On
-
state
resistance
V
I(IN)
= 3 V, 120
mΩ
V
I(IN)
= 2.7 V, 140
Output leakage current
EN = V
I(IN)
0.001 µA
Out
p
ut rise time
V
I(IN)
= 5.5 V, C
L
= 1 µF 4
ms
O
u
tp
u
t
rise
time
V
I(IN)
= 2.7 V, C
L
= 1 µF 3.8
ms
Out
p
ut fall time
V
I(IN)
= 5.5 V, C
L
= 1 µF 3.9
ms
O
u
tp
u
t
fall
time
V
I(IN)
= 2.7 V, C
L
= 1 µF 3.5
ms
†
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
current limit
PARAMETER
TEST CONDITIONS
†
TPS2010Y, TPS2011Y
TPS2012Y, TPS2013Y
UNIT
MIN TYP MAX
Short-circuit current
V
I(IN)
= 5.5 V,
OUT connected to GND,
Device enabled into short circuit
0.4 A
†
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
supply current
PARAMETER TEST CONDITIONS
TPS2010Y, TPS2011Y
TPS2012Y, TPS2013Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
Supply current, low-level output
EN = V
I(IN)
0.015 µA
Supply current, high-level output
EN = 0 V
73 µA