Datasheet

TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
recommended operating conditions
MIN MAX UNIT
Input voltage, V
I(IN)
2.7 5.5 V
Input voltage, V
I
at EN 0 5.5 V
TPS2010 0 0.2
Continuous out
p
ut current I
O
TPS2011 0 0.6
A
Contin
u
o
u
s
o
u
tp
u
t
c
u
rrent
,
I
O
TPS2012 0 1
A
TPS2013 0 1.5
Operating virtual junction temperature, T
J
–40 125 °C
electrical characteristics over recommended operating junction temperature range, V
I(IN)
= 5.5 V,
I
O
= rated current, EN = 0 V (unless otherwise noted)
power switch
PARAMETER
TEST CONDITIONS
†
TPS2010, TPS2011
TPS2012, TPS2013
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
V
I(IN)
= 5.5 V, T
J
= 25°C 75 95
On state resistance
V
I(IN)
= 4.5 V, T
J
= 25°C 80 110
mΩ
On
-
state
resistance
V
I(IN)
= 3 V, T
J
= 25°C 120 175
mΩ
V
I(IN)
= 2.7 V, T
J
= 25°C 140 215
Out
p
ut leakage current
EN V
I(IN)
T
J
= 25°C 0.001 1
µA
O
u
tp
u
t
leakage
c
u
rrent
EN
=
V
I(IN)
–40°C ≤ T
J
≤ 125°C 10
µ
A
t
Out
p
ut rise time
V
I(IN)
= 5.5 V, T
J
= 25°C, C
L
= 1 µF 4
ms
t
r
O
u
tp
u
t
rise
time
V
I(IN)
= 2.7 V, T
J
= 25°C, C
L
= 1 µF 3.8
ms
t
f
Out
p
ut fall time
V
I(IN)
= 5.5 V, T
J
= 25°C, C
L
= 1 µF 3.9
ms
t
f
O
u
tp
u
t
fall
time
V
I(IN)
= 2.7 V, T
J
= 25°C, C
L
= 1 µF 3.5
ms
†
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
enable input (EN)
PARAMETER TEST CONDITIONS
TPS2010, TPS2011
TPS2012, TPS2013
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
High-level input voltage 2.7 V ≤ V
I(IN)
≤ 5.5 V 2 V
Low level in
p
ut voltage
4.5 V ≤ V
I(IN)
≤ 5.5 V 0.8
V
Lo
w-
le
v
el
inp
u
t
v
oltage
2.7 V ≤ V
I(IN)
< 4.5 V 0.4
V
Input current
EN = 0 V or EN = V
I(IN)
–0.5 0.5 µA
t
PLH
Propagation (delay) time, low-to-high-level output C
L
= 1 µF 20
ms
t
PHL
Propagation (delay) time, high-to-low-level output C
L
= 1 µF 40
ms
current limit
PARAMETER
TEST CONDITIONS
†
TPS2010, TPS2011
TPS2012, TPS2013
UNIT
TEST
CONDITIONS
MIN TYP MAX
T
J
=25
°
C
TPS2010 0.22 0.4 0.6
Short circuit current
T
J
=
25 C
,
V
I
(
IN
)
= 5.5 V,
TPS2011 0.66 1.2 1.8
A
Short
-
circ
u
it
c
u
rrent
I(IN)
OUT connected to GND, device
enabled into short circuit
TPS2012 1.1 2 3
A
ena
bl
e
d
i
n
t
o s
h
or
t
c
i
rcu
it
TPS2013 1.65 2.6 4.5
†
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.