Datasheet

TPS2010, TPS2011, TPS2012, TPS2013
POWER-DISTRIBUTION
SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AVAILABLE OPTIONS
RECOMMENDED MAXIMUM TYPICAL SHORT-CIRCUIT
PACKAGED DEVICES
CHIP
T
J
CONTINUOUS LOAD CURRENT
(A)
OUTPUT CURRENT LIMIT AT 25°C
(A)
SOIC
(D)
†
TSSOP
(PW)
‡
FORM
(Y)
0.2 0.4 TPS2010D TPS2010PWLE TPS2010Y
40
°
Cto125
°
C
0.6 1.2 TPS2011D TPS2011PWLE TPS2011Y
–
40°C
to
125°C
1 2 TPS2012D TPS2012PWLE TPS2012Y
1.5 2.6 TPS2013D TPS2013PWLE TPS2013Y
†
The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2010DR).
‡
The PW package is only available left-end taped and reeled (indicated by the LE suffix on the device type; e.g., TPS2010PWLE).
functional block diagram
Power Switch
Current
Limit
Driver
Thermal
Sense
Charge
Pump
IN
EN
GND
OUT
CS
†
†
Current sense
Terminal Functions
TERMINAL
NAME
NO.
I/O DESCRIPTION
NAME
D PW
EN 4 7 I Enable input. Logic low turns power switch on.
GND 1 1 I Ground
IN 2, 3 2–6 I Input voltage
OUT 5–8 8–14 O Power-switch output
detailed description
power switch
The power switch is an N-channel MOSFET with a maximum on-state resistance of 95 mΩ (V
I(IN)
= 5.5 V),
configured as a high-side switch.
charge pump
An internal 100-kHz charge pump supplies power to the driver circuit and provides the necessary voltage to pull
the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and
requires very little supply current.