Datasheet

TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0.2
0.1
0
– 1 – 3 – 5 – 7
0.3
0.4
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
GATE-TO-SOURCE VOLTAGE
0.5
– 9 – 11
– 13 – 15
V
GS
– Gate-to-Source Voltage – V
0.6
0.7
I
D
= –1 A
T
J
= 25°C
– Static Drain-to-Source On-State
r
DS(on)
Ω
Resistance –
Figure 9 Figure 10
– 1.2
– 1.1
– Gate-to-Source Threshold Voltage – V
– 1.3
– 1.4
GATE-TO-SOURCE THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
– 1.5
–50 0 50 100 150
– 1
– 0.9
T
J
– Junction Temperature – °C
V
GS(th)
I
D
= –250 µA
– 6
– 4
– 2
0
0235
– 8
GATE-TO-SOURCE VOLTAGE
vs
GATE CHARGE
– 10
146
– Gate-to-Source Voltage – V
Q
g
– Gate Charge – nC
V
GS
V
DS
= –10 V
I
D
= –1 A
T
J
= 25°C
Figure 11