Datasheet

TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0.3
0.2
0.1
0
– 0.1 – 1
0.4
0.5
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
DRAIN CURRENT
0.6
– 10
I
D
– Drain Current – A
0.7
V
GS
= –2.7 V
V
GS
= –3 V
V
GS
= –4.5 V
V
GS
= –10 V
T
J
= 25°C
– Static Drain-to-Source
r
DS(on)
ΩOn-State Resistance –
Figure 5
200
150
50
0
0 – 1 – 2 – 3 – 4 – 5 – 6
C – Capacitance – pF
250
300
CAPACITANCE
vs
DRAIN-TO-SOURCE VOLTAGE
350
– 7 – 8 – 9 –12
100
–10 –11
C
oss
V
DS
– Drain-to-Source Voltage – V
C
iss
†
C
rss
‡
V
GS
= 0
f = 1 MHz
T
J
= 25°C
†
C
rss
C
gd
,C
oss
C
ds
C
gs
C
gd
C
gs
C
gd
≈ C
ds
C
gd
‡
C
iss
C
gs
C
gd
,C
ds(shorted)
Figure 6
Figure 7
1.2
0.9
0.8
0.6
1.3
1.4
STATIC DRAIN-TO-SOURCE
ON-STATE RESISTANCE (NORMALIZED)
vs
JUNCTION TEMPERATURE
1.5
1.1
1
0.7
–50 0 50 100 150
T
J
– Junction Temperature – °C
V
GS
= –10 V
I
D
= –1A
– Static Drain-to-Source
r
DS(on)
On-State Resistance (Normalized)
– 0.1
0 – 0.6 –1.2 –1.8
– Source-to-Drain Diode Current – A
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN VOLTAGE
–1
–10
– 0.2 – 0.4 – 0.8 – 1 –1.4 –1.6
I
SD
V
SD
– Source-to-Drain Voltage – V
Pulse Test
T
J
= 150°C
T
J
= 25°C
T
J
= –40°C
Figure 8