Datasheet

TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
†
Table of Graphs
FIGURE
Drain current vs Drain-to-source voltage 3
Drain current vs Gate-to-source voltage 4
Static drain-to-source on-state resistance vs Drain current 5
Capacitance vs Drain-to-source voltage 6
Static drain-to-source on-state resistance (normalized) vs Junction temperature 7
Source-to-drain diode current vs Source-to-drain voltage 8
Static drain-to-source on-state resistance vs Gate-to-source voltage 9
Gate-to-source threshold voltage vs Junction temperature 10
Gate-to-source voltage vs Gate charge 11
– 5
– 4
– 2
– 1
0
– 3
0 – 1– 2– 3– 4– 5– 6
– Drain Current – A
– 7
– 6
DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
– 7 – 8 – 9 – 10
V
GS
= –6 V
I
D
V
DS
– Drain-to-Source Voltage – V
V
GS
= –8 V
V
GS
= –7 V
V
GS
= –3 V
V
GS
= –4 V
V
GS
= –2 V
V
GS
= –5 V
T
J
= 25°C
Figure 3 Figure 4
0 – 2 – 3 – 5
DRAIN CURRENT
vs
GATE-TO-SOURCE VOLTAGE
– 7– 1 – 4 – 6
– Drain Current – A
I
D
V
GS
– Gate-to-Source Voltage – V
T
J
= 150°C
T
J
= 25°C
T
J
= –40°C
V
DS
= –10 V
0
– 5
– 4
– 2
– 1
– 3
– 7
– 6
†
All characteristics data applies for each independent MOSFET incorporated on the TPS1120.