Datasheet

TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at T
J
= 25°C (unless otherwise noted)
static
PARAMETER
TEST CONDITIONS
TPS1120
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
V
GS(th)
Gate-to-source threshold voltage V
DS
= V
GS
, I
D
= –250 µA –1 –1.25 –1.50 V
V
SD
Source-to-drain voltage (diode forward voltage)
†
I
S
= –1 A, V
GS
= 0 V –0.9 V
I
GSS
Reverse gate current, drain short circuited to source V
DS
= 0 V, V
GS
= –12 V ±100 nA
I
DSS
Zero gate voltage drain current
V
DS
= –12 V,
T
J
= 25°C –0.5
µA
I
DSS
Zero
-
gate
-v
oltage
drain
c
u
rrent
DS
,
V
GS
= 0 V
T
J
= 125°C –10
µ
A
†
V
GS
= –10 V I
D
= –1.5 A 180
r
DS( )
Static drain to source on state resistance
†
V
GS
= –4.5 V I
D
= –0.5 A 291 400
mΩ
r
DS(on)
St
a
ti
c
d
ra
i
n-
t
o-source on-s
t
a
t
e res
i
s
t
ance
†
V
GS
= –3 V
I
D
=02A
476 700
mΩ
V
GS
= –2.7 V
I
D
= –
0
.
2
A
606 850
g
fs
Forward transconductance
†
V
DS
= –10 V, I
D
= –2 A 2.5 S
†
Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2%
static
PARAMETER
TEST CONDITIONS
TPS1120Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
V
GS(th)
Gate-to-source threshold voltage V
DS
= V
GS
, I
D
= –250 µA –1.25 V
V
SD
Source-to-drain voltage (diode forward voltage)
†
I
S
= –1 A, V
GS
= 0 V –0.9 V
†
V
GS
= –10 V I
D
= –1.5 A 180
r
DS( )
Static drain to source on state resistance
†
V
GS
= –4.5 V I
D
= –0.5 A 291
mΩ
r
DS(on)
St
a
ti
c
d
ra
i
n-
t
o-source on-s
t
a
t
e res
i
s
t
ance
†
V
GS
= –3 V
I
D
=02A
476
mΩ
V
GS
= –2.7 V
I
D
= –
0
.
2
A
606
g
fs
Forward transconductance
†
V
DS
= –10 V, I
D
= –2 A 2.5 S
†
Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2%
dynamic
PARAMETER
TEST CONDITIONS
TPS1120, TPS1120Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
Q
g
Total gate charge 5.45
Q
gs
Gate-to-source charge
V
DS
= –10 V, V
GS
= –10 V, I
D
= –1 A
0.87
nC
Q
gd
Gate-to-drain charge 1.4
t
d(on)
Turn-on delay time 4.5 ns
t
d(off)
Turn-off delay time
V
DD
= –10 V, R
L
= 10 Ω,I
D
= –1 A,
13 ns
t
r
Rise time
DD
,
R
G
= 6 Ω,
L
,
See Figures 1 and 2
D
,
10
t
f
Fall time 2
ns
t
rr(SD)
Source-to-drain reverse recovery time I
F
= 5.3 A, di/dt = 100 A/µs 16