Datasheet

TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 7
1.2
0.9
0.8
0.6
1.3
1.4
STATIC DRAIN-TO-SOURCE
ON-STATE RESISTANCE (NORMALIZED)
vs
JUNCTION TEMPERATURE
1.5
1.1
1
0.7
–50 0 50 100 150
T
J
– Junction Temperature – °C
V
GS
= –10 V
I
D
= –1A
– Static Drain-to-Source
r
DS(on)
On-State Resistance (normalized)
Figure 8
– 0.1
– 0.1
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN VOLTAGE
– 1
– 10
– 0.3 – 0.5 – 0.7
V
SD
– Source-to-Drain Voltage – V
– 0.9 – 1.1 – 1.3
T
J
= 25°C
T
J
= –40°C
T
J
= 150°C
– Source-to-Drain Diode Current – A
I
SD
Pulse Test
Figure 9
0.2
0.1
0
– 1 – 3 – 5 – 7
0.3
0.4
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
GATE-TO-SOURCE VOLTAGE
0.5
– 9 – 11
– 13 – 15
V
GS
– Gate-to-Source Voltage – V
I
D
= –1 A
T
J
= 25°C
– Static Drain-to-Source On-State
r
DS(on)
Resistance –
Ω
Figure 10
– 1.2
– 1.1
– Gate-to-Source Threshold Voltage – V
– 1.3
– 1.4
GATE-TO-SOURCE THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
– 1.5
–50 0 50 100 150
– 1
– 0.9
T
J
– Junction Temperature – °C
V
GS(th)
I
D
= –250 µA