Datasheet

TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 3
– 5
– 4
– 2
– 1
0
– 9
– 3
0 – 1– 2– 3– 4– 5– 6
– Drain Current – A
– 7
– 6
– 8
DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
– 10
– 7 – 8 – 9 – 10
V
GS
= –8 V
V
GS
= –3 V
V
GS
= –4 V
V
GS
= –2 V
I
D
V
DS
– Drain-to-Source Voltage – V
V
GS
= –5 V
T
J
= 25°C
Figure 4
– 6
– 4
– 2
0
0 – 2 – 3 – 5
– 8
DRAIN CURRENT
vs
GATE-TO-SOURCE VOLTAGE
– 10
– 1 – 4
– Drain Current – A
I
D
T
J
= 25°C
T
J
= 150°C
V
GS
– Gate-to-Source Voltage – V
T
J
= –40°C
V
DS
= –10 V
Figure 5
0.3
0.2
0.1
0
– 0.1 – 1
– Static Drain-to-Source On-State
0.4
0.5
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
DRAIN CURRENT
– 10
I
D
– Drain Current – A
r
DS(on)
V
GS
= –4.5 V
V
GS
= –10 V
T
J
= 25°C
Resistance –
Ω
V
GS
= –2.7 V
V
GS
= –3 V
Figure 6
500
400
200
100
0 – 1 – 2 – 3 – 4 – 5 – 6
C – Capacitance – pF
600
700
CAPACITANCE
†
vs
DRAIN-TO-SOURCE VOLTAGE
800
– 7 – 8 – 9 –12
300
–10 –11
C
oss
C
rss
‡
V
DS
– Drain-to-Source Voltage – V
C
iss
†
V
GS
= 0 V
f = 1 MHz
T
J
= 25°C
†
C
rss
C
gd
,C
oss
C
ds
C
gs
C
gd
C
gs
C
gd
≈ C
ds
C
gd
‡
C
iss
C
gs
C
gd
,C
ds(shorted)