Datasheet

TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at T
J
= 25°C (unless otherwise noted)
static
PARAMETER
TEST CONDITIONS
TPS1101 TPS1101Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX MIN TYP MAX
UNIT
V
GS(th)
Gate-to-source
threshold voltage
V
DS
= V
GS
, I
D
= –250 µA –1 –1.25 –1.5 –1.25 V
V
SD
Source-to-drain voltage
(diode-forward voltage)
†
I
S
= –1 A, V
GS
= 0 V –1.04 –1.04 V
I
GSS
Reverse gate current,
drain short circuited to
source
V
DS
= 0 V, V
GS
= –12 V ±100 nA
I
DSS
Zero-gate-voltage drain
V
DS
=12V
V
GS
=0V
T
J
= 25°C –0.5
µA
I
DSS
gg
current
V
DS
= –
12
V
,
V
GS
=
0
V
T
J
= 125°C –10
µ
A
V
GS
= –10 V I
D
= –2.5 A 90 90
r
DS( )
Static drain-to-source
V
GS
= –4.5 V
I
D
= –1.5 A 134 190 134
mΩ
r
DS(on)
Static
drain to source
on-state resistance
†
V
GS
= –3 V
I
D
=05A
198 310 198
mΩ
V
GS
= –2.7 V
I
D
= –
0
.
5
A
232 400 232
g
fs
Forward
transconductance
†
V
DS
= –10 V, I
D
= –2 A 4.3 4.3 S
†
Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2%
dynamic
PARAMETER
TEST CONDITIONS
TPS1101, TPS1101Y
UNIT
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNIT
Q
g
Total gate charge 11.25
Q
gs
Gate-to-source charge
V
DS
= –10 V, V
GS
= –10 V, I
D
= –1 A
1.5
nC
Q
gd
Gate-to-drain charge 2.6
t
d(on)
Turn-on delay time 6.5 ns
t
d(off)
Turn-off delay time
V
DD
= –10 V, R
L
= 10 Ω,I
D
= –1 A,
19 ns
t
r
Rise time
DD
,
R
G
= 6 Ω,
L
,
See Figures 1 and 2
D
,
5.5
t
f
Fall time 13
ns
t
rr(SD)
Source-to-drain reverse recovery time I
F
= 5.3 A, di/dt = 100 A/µs 16