Datasheet

TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
schematic
NOTE A: For all applications, all source terminals should be
connected and all drain terminals should be connected.
SOURCE
DRAIN
GATE
ESD-
Protection
Circuitry
TPS1101Y chip information
This chip, when properly assembled, displays characteristics similar to the TPS1101. Thermal compression or
ultrasonic bonding may be used on the doped aluminum bonding pads. The chips may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
T
J
max = 150°C
TOLERANCES ARE ±10%
ALL DIMENSIONS ARE IN MILS
80
92
TPS1100Y
(2)
(6)
(1)
(3)
(7)
(8)
(5)(4)
DRAINSOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
(2)
(1)
(3) (4)
(6)
(7)(8)
(5)