Datasheet

TPL0102
www.ti.com SLIS134B –MARCH 2011–REVISED AUGUST 2011
ELECTRICAL CHARACTERISTICS (continued)
V
DD
= 2.7V to 5.5V, V
SS
= 0V, V
H
= V
DD
, V
L
= GND, T
A
= –40°C to 85°C (unless otherwise noted). Typical values are at V
DD
=
5V, T
A
= 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RHEOSTAT MODE (Measurements between W and L with H not connected, or between W and H with L not connected)
RINL
(10)(11)
Integral non-linearity –1 1 LSB
RDNL
(10)(12)
Differential non-linearity –0.5 0.5 LSB
R
OFFSET
(13)(14)
Offset 0 0.2 2 LSB
Channel-to-Channel
R
MATCH
(13)(15)
–2 2 LSB
matching
Code = 0x00h,
L Floating,
RBW Bandwidth TPL0102-100 54 kHz
Input applied to W, Measure at H,
C
LOAD
= 10 pF
(10) RLSB = (R
MEAS[code 255]
– R
MEAS[code 0]
) / 255
(11) RINL =( (R
MEAS[code x]
– R
MEAS[code 0]
) / RLSB) - [code x]
(12) RDNL =( (R
MEAS[code x]
– R
MEAS[code x-1]
) / RLSB )– 1
(13) IDEAL_RLSB = R
TOT
/ 256
(14) R
OFFSET
= R
MEAS[code 0]
/ IDEAL_RLSB
(15) R
MATCH
= (R
MEAS_A[code x]
– R
MEAS_B[code x]
) / IDEAL_RLSB
OPERATING CHARACTERISTICS
V
DD
= 2.7V to 5.5V, V
SS
= 0V, V
H
= V
DD
, V
L
= GND, T
A
= –40°C to 85°C (unless otherwise noted). Typical values are at V
DD
=
5V, T
A
= 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
DD
= 2.75 V, V
SS
= –2.75,
I
DD(STBY)
V
DD
standby current 0.2 1 µA
I
2
C interface in standby mode
V
DD
= 2.75 V, V
SS
= –2.75,
I
SS(STBY)
V
SS
standby current –1 –0.2 µA
I
2
C interface in standby mode
V
DD
= 2.75 V, V
SS
= –2.75,
I
DD(SHUTDOWN)
V
DD
shutdown current 0.2 1 µA
I
2
C interface in standby mode
V
DD
= 2.75 V, V
SS
= –2.75,
I
SS(SHUTDOWN)
V
SS
shutdown current –1 –0.2 µA
I
2
C interface in standby mode
V
DD
current during non-volatile V
DD
= 2.75 V, V
SS
= –2.75
I
DD
200 µA
write
V
SS
current during non-volatile V
DD
= 2.75 V, V
SS
= –2.75
I
SS
-200 µA
write
Digital pins leakage current (A0,
I
LKG-DIG
–1 1 µA
A1, A2, SDA, and SCL)
Minimum V
DD
at which memory
V
POR
Power-on recall voltage 2 V
recall occurs
EEPROM Specification
EEPROM endurance 100,000 Cycles
EEPROM retention T
A
= 85°C 100 Years
t
WC
Non-volatile write cycle time 20 ms
Wiper Timing Characteristics
t
WRT
Wiper response time SCL falling edge of last bit of
wiper data byte to wiper new 600 ns
position
t
SHUTDOWNREC
Wiper position recall time from SCL falling edge of last bit of ACR
shut-down mode data byte to wiper stored position 800 ns
and H connection
t
D
Power-up delay V
DD
above V
POR
, to wiper initial
value register recall completed, 35 100 µs
and I
2
C interface in standby mode
C
IN
Pin capacitance A0, A1, A2, SDA SCL pins 7 pF
Copyright © 2011, Texas Instruments Incorporated 7