Datasheet

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SLIS004B − APRIL 1993 − REVISED SEPTEMBER 1995
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251−1443
recommended operating conditions
MIN MAX UNIT
Logic supply voltage, V
CC
4.5 5.5 V
High-level input voltage, V
IH
0.85 V
CC
V
CC
V
Low-level input voltage, V
IL
0 0.15 V
CC
V
Pulsed drain output current, T
C
= 25°C, V
CC
= 5 V (see Notes 3 and 5) −1.8 0.6 A
Setup time, D high before G↑,t
su
(see Figure 2) 10 ns
Hold time, D high before G↑, t
h
(see Figure 2) 5 ns
Pulse duration, t
w
(see Figure 2) 15 ns
Operating case temperature, T
C
−40 125 °C
electrical characteristics, V
CC
= 5 V, T
C
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)DSX
Drain-to-source breakdown voltage I
D
= 1 mA 50 V
V
SD
Source-to-drain diode forward
voltage
I
F
= 350 mA, See Note 3 0.8 1.1 V
I
IH
High-level input current V
I
= V
CC
1 µA
I
IL
Low-level input current V
I
= 0 −1 µA
I
CC
Logic supply current I
O
= 0, V
I
= V
CC
or 0 0.5 5 mA
I
OK
Output current at which chopping
starts
T
C
= 25°C, See Note 5 and Figures 3 and 4 0.6 0.8 1.1 A
I
(nom)
Nominal current
V
DS(on)
= 0.5 V, I
(nom)
= I
D
,T
C
= 85°C,
V
CC
= 5 V, See Notes 5, 6, and 7
350 mA
I
D
Off-state drain current
V
DS
= 40 V, T
C
= 25°C 0.1 1
A
I
D
Off-state drain current
V
DS
= 40 V, T
C
= 125°C
0.2 5
µA
r
DS(on)
Static drain-to-source on-state
I
D
= 350 mA, T
C
= 25°C
See Notes 5 and 6
1 1.5
Ω
r
DS(on)
Static drain-to-source on-state
resistance
I
D
= 350 mA, T
C
= 125°C
See Notes 5 and 6
and Figures 9 and 10
1.7 2.5
Ω
switching characteristics, V
CC
= 5 V, T
C
= 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
PHL
Propagation delay time, high- to low-level output from D 30 ns
t
PLH
Propagation delay time, low- to high-level output from D
C
L
= 30 pF, I
D
= 350 mA,
125 ns
t
r
Rise time, drain output
C
L
= 30 pF, I
D
= 350 mA,
See Figures 1, 2, and 11
60 ns
t
f
Fall time, drain output
See Figures 1, 2, and 11
30 ns
t
a
Reverse-recovery-current rise time
I
F
= 350 mA, di/dt = 20 A/µs,
100 ns
t
rr
Reverse-recovery time
I
F
= 350 mA, di/dt = 20 A/µs,
See Notes 5 and 6 and Figure 5
300 ns
NOTES: 3. Pulse duration ≤ 100 µs and duty cycle ≤ 2%.
5. Technique should limit T
J
− T
C
to 10°C maximum.
6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
7. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a
voltage drop of 0.5 V at T
C
= 85°C.
thermal resistance
PARAMETER TEST CONDITIONS MIN MAX UNIT
R
JC
Thermal resistance, junction-to-case
DW
All eight outputs with equal power
10
°C/W
R
θJC
Thermal resistance, junction-to-case
NE
All eight outputs with equal power
10
°C/W
R
JA
Thermal resistance, junction-to-ambient
DW
All eight outputs with equal power
50
°C/W
R
θJA
Thermal resistance, junction-to-ambient
NE
All eight outputs with equal power
50
°C/W