Datasheet
SLIS010B − APRIL 1992 − REVISED MAY 2005
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
recommended operating conditions over recommended operating temperature range (unless
otherwise noted)
MIN MAX UNIT
Logic supply voltage, V
CC
4.5 5.5 V
High-level input voltage, V
IH
0.85 V
CC
V
Low-level input voltage, V
IL
0.15 V
CC
V
Pulsed drain output current, T
C
= 25°C, V
CC
= 5 V (see Notes 3 and 5) −1.8 1.5 A
Setup time, SER IN high before SRCK↑, t
su
(see Figure 2) 10 ns
Hold time, SER IN high after SRCK↑, t
h
(see Figure 2) 10 ns
Pulse duration, t
w
(see Figure 2) 20 ns
Operating case temperature, T
C
−40 125 °C
electrical characteristics, V
CC
= 5 V, T
C
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)DSX
Drain-source breakdown voltage I
D
= 1 mA 45 V
V
SD
Source-drain diode forward voltage I
F
= 250 mA, See Note 3 0.85 1 V
V
OH
High-level output voltage,
I
OH
= −20 mA, V
CC
= 4.5 V 4.4 4.49
V
V
OH
High-level output voltage,
SER OUT
I
OH
= −4 mA, V
CC
= 4.5 V
4.1 4.3
V
V
OL
Low-level output voltage, SER
I
OH
= 20 mA, V
CC
= 4.5 V 0.002 0.1
V
V
OL
Low-level output voltage, SER
OUT
I
OH
= 4 mA, V
CC
= 4.5 V
0.2 0.4
V
V
(hys)
Input hysteresis V
DS
= 15 V 1.3 V
I
IH
High-level input current V
CC
= 5.5 V, V
I
= V
CC
1 µA
I
IL
Low-level input current V
CC
= 5.5 V, V
I
= 0 −1 µA
I
CCL
Logic supply current I
O
= 0, All inputs low 15 100 µA
I
CC(FRQ)
Logic supply current frequency
f
SRCK
= 5 MHz, I
O
= 0, C
L
= 30 pF,
See Figures 1, 2, and 6
0.6 5 mA
I
N
Nominal current
V
DS(on)
= 0.5 V,
I
N
= I
D
,T
C
= 85°C
See Notes 5, 6, and 7 250 mA
I
DSX
Off-state drain current
V
DS
= 40 V 0.05 1
A
I
DSX
Off-state drain current
V
DS
= 40 V, T
C
= 125°C
0.15 5
µA
I
D
= 250 mA, V
CC
= 4.5 V 1.3 2
r
DS(on)
Static drain-source on-state
resistance
I
D
= 250 mA, T
C
= 125°C,
V
CC
= 4.5 V
See Notes 5 and 6
and Figures 9 and 10
2 3.2
Ω
resistance
I
D
= 500 mA, V
CC
= 4.5 V
and Figures 9 and 10
1.3 2
switching characteristics, V
CC
= 5 V, T
C
= 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
PLH
Propagation delay time, low-to-high-level output from G 650 ns
t
PHL
Propagation delay time, high-to-low-level output from G
C
L
= 30 pF, I
D
= 250 mA,
150 ns
t
r
Rise time, drain output
C
L
= 30 pF, I
D
= 250 mA,
See Figures 1 and 2
750 ns
t
f
Fall time, drain output
See Figures 1 and 2
425 ns
t
a
Reverse-recovery-current rise time
I
F
= 250 mA, di/dt = 20 A/µs,
100
ns
t
rr
Reverse-recovery time
I
F
= 250 mA, di/dt = 20 A/µs,
See Notes 5 and 6 and Figure 3
300
ns
NOTES: 3. Pulse duration ≤ 100 µs, duty cycle ≤ 2%
5. Technique should limit T
J
− T
C
to 10°C maximum.
6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
7. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a
voltage drop of 0.5 V at T
C
= 85°C.