Datasheet
TPD12S521
SLVS639C –OCTOBER 2007–REVISED JANUARY 2013
www.ti.com
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
CC5
Operating supply current 5V_SUPPLY = 5 V 110 130 μA
I
CC3
Bias supply current LV_SUPPLY = 3.3 V 1 5 μA
V
DROP
5V_OUT overcurrent output drop 5V_SUPPLY = 5 V, I
OUT
= 55 mA 150 200 mV
I
SC
5V_OUT short-circuit current limit 5V_SUPPLY= 5 V, 5V_OUT = GND 90 135 175 mA
OFF-state leakage current,
I
OFF
LV_SUPPLY = 0 V 0.1 5 μA
level-shifting NFET
TMDS_D[2:0]+/–,
TMDS_CK+/–,
Current conducted from output pins to CE_REMOTE_OUT,
I
BACKDRIVE
5V_SUPPLY < V
CH_OUT
0.1 5 μA
V_SUPPLY rails when powered down DDC_DAT_OUT,
DDC_CLK_OUT,
HOTPLUG_DET_OUT
Voltage drop across level-shifting NFET
V
ON
LV_SUPPLY = 2.5 V, V
S
= GND, I
DS
= 3 mA 75 95 140 mV
when ON
Top diode 0.85
I
F
= 8 mA,
V
F
Diode forward voltage V
T
A
= 25°C
(1)
Bottom diode 0.85
Pins 4, 7, 10, 13, 20–24, 27, 30, 33
(1) (2)
IEC ±8
V
ESD
ESD withstand voltage kV
Pins 1, 2, 16–19, 37, 38
(1) (3)
HBM ±2
Positive transients 9
Channel clamp voltage
V
CL
T
A
= 25°C
(1) (3)
V
at ±8-kV HBM ESD
Negative transients –9
Positive transients 3
R
DYN
Dynamic resistance I = 1 A, T
A
= 25°C
(4)
Ω
Negative transients 1.5
I
LEAK
TMDS channel leakage current T
A
= 25°C
(1)
0.01 1 μA
C
IN
, 5V_SUPPLY= 5 V, Measured at 1 MHz,
TMDS channel input capacitance 0.8 1.0 pF
TMDS V
BIAS
= 2.5 V
(1)
ΔC
IN
, TMDS channel input capacitance 5V_SUPPLY= 5 V, Measured at 1 MHz,
0.05 pF
TMDS matching V
BIAS
= 2.5 V
(1) (5)
Mutual capacitance between signal pin 5V_SUPPLY= 0 V, Measured at 1 MHz,
C
MUTUAL
0.07 pF
and adjacent signal pin V
BIAS
= 2.5 V
(1)
DDC 3.5 4
Level-shifting input capacitance, 5V_SUPPLY= 0 V, Measured at 100 KHz,
C
IN
CEC 3.5 4 pF
capacitance to GND V
BIAS
= 2.5 V
(1)
HP 3.5 4
(1) This parameter is specified by design and verified by device characterization.
(2) Standard IEC 61000-4-2, C
DISCHARGE
= 150 pF, R
DISCHARGE
= 330 Ω
(3) Human-Body Model (HBM) per MIL-STD-883, Method 3015, C
DISCHARGE
= 100 pF, R
DISCHARGE
= 1.5 kΩ
(4) These measurements performed with no external capacitor on ESD_BYP.
(5) Intrapair matching, each TMDS pair (i.e., D+, D–)
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