Datasheet

ELECTRICAL CHARACTERISTICS
TPD12S520
SLVS640C – OCTOBER 2007 – REVISED APRIL 2009 .................................................................................................................................................... www.ti.com
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
5V
Operating supply current 5V_SUPPLY = 5 V 1 5 µ A
I
LV
Bias supply current LV_SUPPLY = 3.3 V 1 2 µ A
OFF-state leakage current,
I
OFF
LV_SUPPLY = 0 V 0.1 1 µ A
level-shifting NFET
TMDS_[2:0]+/ – ,
TMDS_CK+/ – ,
Current conducted from output
CE_REMOTE_OUT,
I
BACKDRIVE
pins to V_SUPPLY rails when 5V_SUPPLY < V
CH_OUT
0.1 5 µ A
DDC_DAT_OUT,
powered down
DDC_CLK_OUT,
HOTPLUG_DET_OUT
Voltage drop across level-shifting
V
ON
LV_SUPPLY = 2.5 V, V
S
= GND, I
DS
= 3 mA 75 95 140 mV
NFET when ON
Top diode 1
V
F
Diode forward voltage I
F
= 8 mA, T
A
= 25 ° C
(1)
V
Bottom diode 1
Pins 4, 7,10,13, 20 – 24, 27,
IEC ± 8
30, 33
(1) (2)
V
ESD
ESD withstand voltage kV
Pins 1, 2, 16 – 19, 37
(1) (3)
HBM ± 2
Positive transients 9
Channel clamp voltage at 8-kV
V
CL
T
A
= 25 ° C
(1) (3)
V
HBM ESD
Negative transients – 9
Positive transients 3
R
DYN
Dynamic resistance I = 1 A, T
A
= 25 ° C
(4)
Ω
Negative transients 1.5
I
LEAK
TMDS channel leakage current T
A
= 25 ° C
(1)
0.01 1 µ A
C
IN
, 5V_SUPPLY = 5 V, Measured at 1 MHz,
TMDS channel input capacitance 0.8 1.0 pF
TMDS V
BIAS
= 2.5 V
(1)
Δ C
IN
, TMDS channel input capacitance 5V_SUPPLY = 5 V, Measured at 1 MHz,
0.05 pF
TMDS matching V
BIAS
= 2.5 V
(1) (5)
Mutual capacitance between 5V_SUPPLY = 0 V, Measured at 1 MHz,
C
MUTUAL
0.07 pF
signal pin and adjacent signal pin V
BIAS
= 2.5 V
(1)
DDC 3.5 4
5V_SUPPLY = 0 V,
Level-shifting input capacitance,
C
IN
Measured at 100 KHz, CEC 3.5 4 pF
capacitance to GND
VBIAS = 2.5 V
(1)
HP 3.5 4
(1) This parameter is specified by design.
(2) Standard IEC 61000-4-2, C
DISCHARGE
= 150 pF, R
DISCHARGE
= 330 Ω , 5V_SUPPLY and LV_SUPPLY within recommended operating
conditions, GND = 0 V, and ESD_BYP (pin 37) and HOTPLUG_DET_OUT (pin 20) each bypassed with a 0.1- µ F ceramic capacitor
connected to GND.
(3) HBM per MIL-STD-883, Method 3015, C
DISCHARGE
= 100 pF, R
DISCHARGE
= 1.5 k Ω , 5V_SUPPLY and LV_SUPPLY within recommended
operating conditions, GND = 0 V, and ESD_BYP (pin 37) and HOTPLUG_DET_OUT (pin 20) each bypassed with a 0.1- µ F ceramic
capacitor connected to GND.
(4) These measurements performed with no external capacitor on ESD_BYP.
(5) Intrapair matching, each TMDS pair (i.e., D+, D – )
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