Datasheet

TLV2731, TLV2731Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS198A – AUGUST 1997 – REVISED MARCH 2001
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2731Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2731C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 10 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
T
J
max = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (2) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
–
OUT
IN+
IN–
V
DD+
(2)
(3)
(4)
(1)
(5)
V
DD–
/GND
46
(3)
(2)
(1)
(5)
(4)
31