Datasheet

TPA3113D2
www.ti.com SLOS650E –AUGUST 2009–REVISED JULY 2012
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
V
CC
Supply voltage PVCC, AVCC 8 26 V
V
IH
High-level input voltage SD, GAIN0, GAIN1, PBTL 2 V
V
IL
Low-level input voltage SD, GAIN0, GAIN1, PBTL 0.8 V
V
OL
Low-level output voltage FAULT, R
PULL-UP
=100k, V
CC
=26V 0.8 V
I
IH
High-level input current SD, GAIN0, GAIN1, PBTL, V
I
= 2V, V
CC
= 18 V 50 µA
I
IL
Low-level input current SD, GAIN0, GAIN1, PBTL, V
I
= 0.8 V, V
CC
= 18 V 5 µA
T
A
Operating free-air temperature –40 85 °C
DC CHARACTERISTICS
T
A
= 25°C, V
CC
= 24 V, R
L
= 8 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Class-D output offset voltage (measured
| V
OS
| V
I
= 0 V, Gain = 36 dB 1.5 15 mV
differentially)
I
CC
Quiescent supply current SD = 2 V, no load, PV
CC
= 24V 32 50 mA
I
CC(SD)
Quiescent supply current in shutdown mode SD = 0.8 V, no load, PV
CC
= 24V 250 400 µA
High Side 400
V
CC
= 12 V, I
O
= 500 mA,
r
DS(on)
Drain-source on-state resistance mΩ
T
J
= 25°C
Low side 400
GAIN0 = 0.8 V 19 20 21
GAIN1 = 0.8 V dB
GAIN0 = 2 V 25 26 27
G Gain
GAIN0 = 0.8 V 31 32 33
GAIN1 = 2 V dB
GAIN0 = 2 V 35 36 37
t
on
Turn-on time SD = 2 V 14 ms
t
OFF
Turn-off time SD = 0.8 V 2 μs
GVDD Gate Drive Supply I
GVDD
= 100μA 6.4 6.9 7.4 V
t
DCDET
DC Detect time V
(RINN)
= 6V, VRINP = 0V 420 ms
DC CHARACTERISTICS
T
A
= 25°C, V
CC
= 12 V, R
L
= 8 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Class-D output offset voltage (measured
| V
OS
| V
I
= 0 V, Gain = 36 dB 1.5 15 mV
differentially)
I
CC
Quiescent supply current SD = 2 V, no load, PV
CC
= 12V 20 35 mA
I
CC(SD)
Quiescent supply current in shutdown mode SD = 0.8 V, no load, PV
CC
= 12V 200 µA
High Side 400
V
CC
= 12 V, I
O
= 500 mA,
r
DS(on)
Drain-source on-state resistance mΩ
T
J
= 25°C
Low side 400
GAIN0 = 0.8 V 19 20 21
GAIN1 = 0.8 V dB
GAIN0 = 2 V 25 26 27
G Gain
GAIN0 = 0.8 V 31 32 33
GAIN1 = 2 V dB
GAIN0 = 2 V 35 36 37
t
ON
Turn-on time SD = 2 V 14 ms
t
OFF
Turn-off time SD = 0.8 V 2 μs
GVDD Gate Drive Supply I
GVDD
= 2mA 6.4 6.9 7.4 V
Output Voltage maximum under PLIMIT
V
O
V
(PLIMIT)
= 2 V; V
I
= 1V rms 6.75 7.90 8.75 V
control
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