Datasheet
TPA3106D1
SLOS516C –OCTOBER 2007–REVISED AUGUST 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
UNIT
V
CC
Supply voltage AVCC, PVCC –0.3 V to 30 V
SHUTDOWN, MUTE –0.3 V to V
CC
+ 0.3 V
V
I
Input voltage
GAIN0, GAIN1, INN, INP, MSTR/SLV, SYNC –0.3 V to VREG + 0.5 V
Continuous total power dissipation See Thermal Information Table
T
A
Operating free-air temperature range –40°C to 85°C
T
J
Operating junction temperature range
(2)
–40°C to 150°C
T
stg
Storage temperature range –65°C to 150°C
R
Load
Load resistance 3.2 Ω Minimum
Human body model
(3)
(all pins) ±2 kV
Electrostatic discharge
Charged-device model
(4)
(all pins) ±500 V
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operations of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The TPA3106D1 incorporates an exposed thermal pad on the underside of the chip. This acts as a heatsink, and it must be connected
to a thermally dissipating plane for proper power dissipation. Failure to do so may result in the device going into thermal protection
shutdown. See TI Technical Briefs SCBA017D and SLUA271 for more information about using the QFN thermal pad. See TI Technical
Briefs SLMA002 for more information about using the HTQFP thermal pad.
(3) In accordance with JEDEC Standard 22, Test Method A114-B.
(4) In accordance with JEDEC Standard 22, Test Method C101-A
THERMAL INFORMATION
TPA3106D1
THERMAL METRIC
(1) (2)
UNITS
VFP (32 PINS)
q
JA
Junction-to-ambient thermal resistance 28.23
q
JCtop
Junction-to-case (top) thermal resistance 32.4
q
JB
Junction-to-board thermal resistance 16.6
°C/W
y
JT
Junction-to-top characterization parameter 1
y
JB
Junction-to-board characterization parameter 6.7
q
JCbot
Junction-to-case (bottom) thermal resistance 1.1
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
V
CC
Supply voltage PVCC, AVCC 10 26 V
V
IH
High-level input voltage SHUTDOWN, MUTE, GAIN0, GAIN1, MSTR/SLV, SYNC 2 V
V
IL
Low-level input voltage SHUTDOWN, MUTE, GAIN0, GAIN1, MSTR/SLV, SYNC 0.8 V
SHUTDOWN, V
I
= V
CC
, V
CC
= 24 V 125
I
IH
High-level input current MUTE, V
I
= V
CC
, V
CC
= 24 V 75 µA
GAIN0, GAIN1, MSTR/SLV, SYNC, V
I
= VREG, V
CC
= 24 V 2
SHUTDOWN, V
I
= 0, V
CC
= 24 V 2
I
IL
Low-level input current µA
SYNC, MUTE, GAIN0, GAIN1, MSTR/SLV, V
I
= 0 V, V
CC
= 24 V 1
V
OH
High-level output voltage FAULT, I
OH
= 1 mA VREG – 0.6 V
V
OL
Low-level output voltage FAULT, I
OL
= -1 mA AGND + 0.4 V
f
OSC
Oscillator frequency R
OSC
resistor = 100 kΩ 200 300 kHz
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