Datasheet
www.ti.com
Gate
Drive
_
+
Gate
Drive
_
+
_
+
_
+
Gain
Adjust
Gain
Adjust
Start-Up
Protection
Logic
OC
Detect
OC
Detect
Thermal V
DD
ok
Ramp
Generator
Biases
and
References
Gate
Drive
_
+
Gate
Drive
_
+
_
+
_
+
Gain
Adjust
Gain
Adjust
Gain
2
AGNDV
DD
V
DD
PV
DD
RINN
ROUTN
PGND
PV
DD
ROUTP
PGND
PV
DD
LOUTP
PGND
PV
DD
LOUTN
PGND
RINP
SHUTDOWN
GAIN1
GAIN0
COSC
ROSC
BYPASS
LINP
LINN
TPA2000D2
SLOS291F – MARCH 2000 – REVISED MARCH 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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