Datasheet
TMS320F28335, TMS320F28334, TMS320F28332
TMS320F28235, TMS320F28234, TMS320F28232
SPRS439M –JUNE 2007–REVISED AUGUST 2012
www.ti.com
6.17 Flash Timing
Table 6-65. Flash Endurance for A and S Temperature Material
(1)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles) 0°C to 85°C (ambient) 20000 50000 cycles
N
OTP
OTP endurance for the array (write cycles) 0°C to 85°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-66. Flash Endurance for Q Temperature Material
(1)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles) –40°C to 125°C (ambient) 20000 50000 cycles
N
OTP
OTP endurance for the array (write cycles) –40°C to 125°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-67. Flash Parameters at 150-MHz SYSCLKOUT
TEST
PARAMETER MIN TYP MAX UNIT
CONDITIONS
Program Time 16-Bit Word 50 μs
32K Sector 1000 ms
16K Sector 500 ms
Erase Time
(1)
32K Sector 2 s
16K Sector 2 s
I
DD3VFLP
(2)
V
DD3VFL
current consumption during the Erase/Program Erase 75 mA
cycle
Program 35 mA
I
DDP
(2)
V
DD
current consumption during Erase/Program cycle 180 mA
I
DDIOP
(2)
V
DDIO
current consumption during Erase/Program cycle 20 mA
(1) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent
programming operations.
(2) Typical parameters as seen at room temperature including function call overhead, with all peripherals off.
Table 6-68. Flash/OTP Access Timing
PARAMETER MIN MAX UNIT
t
a(fp)
Paged Flash access time 37 ns
t
a(fr)
Random Flash access time 37 ns
t
a(OTP)
OTP access time 60 ns
Table 6-69. Flash Data Retention Duration
PARAMETER TEST CONDITIONS MIN MAX UNIT
t
retention
Data retention duration T
J
= 55°C 15 years
182 Electrical Specifications Copyright © 2007–2012, Texas Instruments Incorporated
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