Datasheet
TMS320F28335, TMS320F28334, TMS320F28332
TMS320F28235, TMS320F28234, TMS320F28232
SPRS439M –JUNE 2007–REVISED AUGUST 2012
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6.14.7 External Interface Ready-on-Read Timing With One External Wait State
Table 6-41. External Interface Read Switching Characteristics (Ready-on-Read, 1 Wait State)
PARAMETER MIN MAX UNIT
t
d(XCOH-XZCSL)
Delay time, XCLKOUT high to zone chip-select active low 1 ns
t
d(XCOHL-XZCSH)
Delay time, XCLKOUT high/low to zone chip-select inactive high –1 0.5 ns
t
d(XCOH-XA)
Delay time, XCLKOUT high to address valid 1.5 ns
t
d(XCOHL-XRDL)
Delay time, XCLKOUT high/low to XRD active low 0.5 ns
t
d(XCOHL-XRDH)
Delay time, XCLKOUT high/low to XRD inactive high – 1.5 0.5 ns
t
h(XA)XZCSH
Hold time, address valid after zone chip-select inactive high
(1)
ns
t
h(XA)XRD
Hold time, address valid after XRD inactive high
(1)
ns
(1) During inactive cycles, the XINTF address bus always holds the last address put out on the bus, except XA0, which remains high. This
includes alignment cycles.
Table 6-42. External Interface Read Timing Requirements (Ready-on-Read, 1 Wait State)
MIN MAX UNIT
t
a(A)
Access time, read data from address valid (LR + AR) – 16
(1)
ns
t
a(XRD)
Access time, read data valid from XRD active low AR – 14
(1)
ns
t
su(XD)XRD
Setup time, read data valid before XRD strobe inactive high 14 ns
t
h(XD)XRD
Hold time, read data valid after XRD inactive high 0 ns
(1) LR = Lead period, read access. AR = Active period, read access. See Table 6-36.
Table 6-43. Synchronous XREADY Timing Requirements (Ready-on-Read, 1 Wait State)
(1)
MIN MAX UNIT
t
su(XRDYsynchL)XCOHL
Setup time, XREADY (synchronous) low before XCLKOUT high/low 12 ns
t
h(XRDYsynchL)
Hold time, XREADY (synchronous) low 6 ns
t
e(XRDYsynchH)
Earliest time XREADY (synchronous) can go high before the sampling 3 ns
XCLKOUT edge
t
su(XRDYsynchH)XCOHL
Setup time, XREADY (synchronous) high before XCLKOUT high/low 12 ns
t
h(XRDYsynchH)XZCSH
Hold time, XREADY (synchronous) held high after zone chip select high 0 ns
(1) The first XREADY (synchronous) sample occurs with respect to E in Figure 6-25:
E = (XRDLEAD + XRDACTIVE) t
c(XTIM)
When first sampled, if XREADY (synchronous) is found to be high, then the access will finish. If XREADY (synchronous) is found to be
low, it is sampled again each t
c(XTIM)
until it is found to be high.
For each sample (n) the setup time (F) with respect to the beginning of the access can be calculated as:
F = (XRDLEAD + XRDACTIVE +n − 1) t
c(XTIM)
− t
su(XRDYsynchL)XCOHL
where n is the sample number: n = 1, 2, 3, and so forth.
Table 6-44. Asynchronous XREADY Timing Requirements (Ready-on-Read, 1 Wait State)
MIN MAX UNIT
t
su(XRDYAsynchL)XCOHL
Setup time, XREADY (asynchronous) low before XCLKOUT high/low 11 ns
t
h(XRDYAsynchL)
Hold time, XREADY (asynchronous) low 6 ns
t
e(XRDYAsynchH)
Earliest time XREADY (asynchronous) can go high before the sampling 3 ns
XCLKOUT edge
t
su(XRDYAsynchH)XCOHL
Setup time, XREADY (asynchronous) high before XCLKOUT high/low 11 ns
t
h(XRDYasynchH)XZCSH
Hold time, XREADY (asynchronous) held high after zone chip select high 0 ns
160 Electrical Specifications Copyright © 2007–2012, Texas Instruments Incorporated
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