Datasheet
TMS320F2809, TMS320F2808, TMS320F2806
TMS320F2802, TMS320F2801, TMS320C2802
TMS320C2801, TMS320F28016, TMS320F28015
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SPRS230N –OCTOBER 2003–REVISED MAY 2012
6.12 Flash Timing
Table 6-43. Flash Endurance for A and S Temperature Material
(1)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles) 0°C to 85°C (ambient) 20000 50000 cycles
N
OTP
OTP endurance for the array (write cycles) 0°C to 85°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-44. Flash Endurance for Q Temperature Material
(1)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles) –40°C to 125°C (ambient) 20000 50000 cycles
N
OTP
OTP endurance for the array (write cycles) –40°C to 125°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-45. Flash Parameters at 100-MHz SYSCLKOUT
PARAMETER
(1)
TEST CONDITIONS MIN TYP MAX UNIT
Program 16-Bit Word 50 μs
Time
16K Sector 500 ms
8K Sector 250 ms
4K Sector 125 ms
Erase 16K Sector 2 s
Time
(2)
8K Sector 2 s
4K Sector 2 s
I
DD3VFLP
V
DD3VFL
current consumption during the Erase 75 mA
Erase/Program cycle
Program 35 mA
I
DDP
V
DD
current consumption during 140 mA
Erase/Program cycle
I
DDIOP
V
DDIO
current consumption during 20 mA
Erase/Program cycle
(1) Typical parameters as seen at room temperature including function call overhead, with all peripherals off.
(2) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent
programming operations.
Copyright © 2003–2012, Texas Instruments Incorporated Electrical Specifications 131
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