Datasheet

TMS320F28069, TMS320F28068, TMS320F28067, TMS320F28066
TMS320F28065, TMS320F28064, TMS320F28063, TMS320F28062
www.ti.com SPRS698D –NOVEMBER 2010–REVISED DECEMBER 2012
5.25 Flash Timing
Table 5-78. Flash/OTP Endurance for T Temperature Material
(1)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles) 0°C to 105°C (ambient) 20000 50000 cycles
N
OTP
OTP endurance for the array (write cycles) 0°C to 30°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 5-79. Flash/OTP Endurance for S Temperature Material
(1)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles) 0°C to 125°C (ambient) 20000 50000 cycles
N
OTP
OTP endurance for the array (write cycles) 0°C to 30°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 5-80. Flash/OTP Endurance for Q Temperature Material
(1)(2)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles) –40°C to 125°C (ambient) 20000 50000 cycles
N
OTP
OTP endurance for the array (write cycles) –40°C to 30°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
(2) The "Q" temperature option is not available on the 2806xU devices.
Table 5-81. Flash Parameters at 90-MHz SYSCLKOUT
TEST
PARAMETER MIN TYP MAX UNIT
CONDITIONS
Program Time 16-Bit Word 50 μs
16K Sector 500 ms
8K Sector 250 ms
4K Sector 125 ms
Erase Time
(1)
16K Sector 2 s
8K Sector 2 s
4K Sector 2 s
I
DDP
(2)
V
DD
current consumption during Erase/Program cycle VREG disabled 80 mA
I
DDIOP
(2)
V
DDIO
current consumption during Erase/Program cycle 60
I
DDIOP
(2)
V
DDIO
current consumption during Erase/Program cycle VREG enabled 120 mA
(1) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent
programming operations.
(2) Typical parameters as seen at room temperature including function call overhead, with all peripherals off.
Table 5-82. Flash/OTP Access Timing
(1)
PARAMETER MIN MAX UNIT
t
a(fp)
Paged Flash access time 36 ns
t
a(fr)
Random Flash access time 36 ns
t
a(OTP)
OTP access time 60 ns
(1) Access time numbers shown in this table are prior to device characterization. Final numbers will be published in the TMS datasheet.
Copyright © 2010–2012, Texas Instruments Incorporated Peripheral and Electrical Specifications 155
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