Datasheet

TMS320F28027, TMS320F28026, TMS320F28023, TMS320F28022
TMS320F28021, TMS320F28020, TMS320F280200
SPRS523J –NOVEMBER 2008–REVISED OCTOBER 2013 www.ti.com
6.13 Flash Timing
Table 6-42. Flash/OTP Endurance for T Temperature Material
(1)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles) 0°C to 105°C (ambient) 20000 50000 cycles
N
OTP
OTP endurance for the array (write cycles) 0°C to 30°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-43. Flash/OTP Endurance for S Temperature Material
(1)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles) 0°C to 125°C (ambient) 20000 50000 cycles
N
OTP
OTP endurance for the array (write cycles) 0°C to 30°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-44. Flash/OTP Endurance for Q Temperature Material
(1)
ERASE/PROGRAM
MIN TYP MAX UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles) –40°C to 125 ° C (ambient) 20000 50000 cycles
N
OTP
OTP endurance for the array (write cycles) –40°C to 30°C (ambient) 1 write
(1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-45. Flash Parameters at 60-MHz SYSCLKOUT
TEST
PARAMETER MIN TYP MAX UNIT
CONDITIONS
I
DDP
(1)
V
DD
current consumption during Erase/Program cycle VREG 80 mA
disabled
I
DDIOP
(1)
V
DDIO
current consumption during Erase/Program cycle 60
I
DDIOP
(1)
V
DDIO
current consumption during Erase/Program cycle VREG enabled 120 mA
(1) Typical parameters as seen at room temperature including function call overhead, with all peripherals off. It is important to maintain a
stable power supply during the entire flash programming process. It is conceivable that device current consumption during flash
programming could be higher than normal operating conditions. The power supply used should ensure V
MIN
on the supply rails at all
times, as specified in the Recommended Operating Conditions of the data sheet. Any brown-out or interruption to power during
erasing/programming could potentially corrupt the password locations and lock the device permanently. Powering a target board (during
flash programming) through the USB port is not recommended, as the port may be unable to respond to the power demands placed
during the programming process.
Table 6-46. Flash Parameters at 50-MHz SYSCLKOUT
TEST
PARAMETER MIN TYP MAX UNIT
CONDITIONS
I
DDP
(1)
V
DD
current consumption during Erase/Program cycle VREG 70 mA
disabled
I
DDIOP
(1)
V
DDIO
current consumption during Erase/Program cycle 60
I
DDIOP
(1)
V
DDIO
current consumption during Erase/Program cycle VREG enabled 110 mA
(1) Typical parameters as seen at room temperature including function call overhead, with all peripherals off. It is important to maintain a
stable power supply during the entire flash programming process. It is conceivable that device current consumption during flash
programming could be higher than normal operating conditions. The power supply used should ensure V
MIN
on the supply rails at all
times, as specified in the Recommended Operating Conditions of the data sheet. Any brown-out or interruption to power during
erasing/programming could potentially corrupt the password locations and lock the device permanently. Powering a target board (during
flash programming) through the USB port is not recommended, as the port may be unable to respond to the power demands placed
during the programming process.
120 Electrical Specifications Copyright © 2008–2013, Texas Instruments Incorporated
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