Datasheet

2.5
2.0
1.5
1.0
0.5
0
0.5
1.0
1.5
2.0
2.5-
-
-
-
-
RemoteTemperatureError( C)
°
0 100 200 300 400 500
R ( )W
S
3
2
1
0
1
2
3
-
-
-
RemoteTemperatureError( C)
°
0 100 200 300 400 500 600 700 800 900
1k
R ( )W
S
Diode-ConnectedTransistor,2N3906(PNP)
(2)
GNDCollector-ConnectedTransistor,2N3906(PNP)
(1)(2)
NOTES(1):Temperatureoffsetistheresultof
-factorbeingautomaticallysetto1.000.
Approximate -factorof2N3906is1.008.
h
h
SeeFigure10forschematicconfiguration.(2)
3.0
2.5
2.0
1.5
1.0
0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
-
-
-
-
-
-
RemoteTemperatureError(
C)
°
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Capacitance(nF)
Low-BetaTransistor(Disabled)
Low-BetaTransistor
(Auto)
GNDCollector-ConnectedTransistor(Disabled)
GNDCollector-ConnectedTransistor(Auto)
Diode-ConnectedTransistor(Auto,Disabled)
NOTE:SeeFigure11forschematicconfiguration.
(b) Diode-ConnectedTransistor
(a) GNDCollector-ConnectedTransistor
DXP
DXN
C
DIFF
(1)
DXP
DXN
C
DIFF
(1)
(b) Diode-ConnectedTransistor
(a) GNDCollector-ConnectedTransistor
DXP
DXN
R
S
(1)
R
S
(1)
DXP
DXN
R
S
(1)
R
S
(1)
TMP441
TMP442
www.ti.com .............................................................................................................................................. SBOS425A – DECEMBER 2008 – REVISED MARCH 2009
TYPICAL CHARACTERISTICS (continued)
At T
A
= +25 ° C and V
S
= +3.3V, unless otherwise noted.
REMOTE TEMPERATURE ERROR vs SERIES RESISTANCE
REMOTE TEMPERATURE ERROR vs SERIES RESISTANCE (Low-Beta Transistor)
Figure 7. Figure 8.
REMOTE TEMPERATURE ERROR
vs DIFFERENTIAL CAPACITANCE
Figure 9.
SERIES RESISTANCE CONFIGURATION DIFFERENTIAL CAPACITANCE CONFIGURATION
(1) R
S
should be less than 1k Ω ; see Filtering (1) C
DIFF
should be less than 300pF; see Filtering
section. section.
Figure 10. Figure 11.
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