Datasheet

"#$$
SBOS383C − DECEMBER 2006 − REVISED MAY 2008
www.ti.com
4
TYPICAL CHARACTERISTICS
At T
A
= +25°C and V
S
= 5.0V, unless otherwise noted.
Figure 1.
3
2
1
0
−
1
−
2
−
3
REMOTE TEMPERATURE ERROR
vs TMP411 AMBIENT TEMPERATURE
Ambient Temperature, T
A
(
_
C)
−
50
−
25 1251007550250
Remote Temperature Error (
_
C)
V
S
=3.3V
T
DIODE
=+25
_
C (temperature at remote diode)
30 Typical Units Shown
η
=1.008
Figure 2.
LOCAL TEMPERATURE ERROR
vs TMP411 AMBIENT TEMPERATURE
Local Temperature Error (
_
C)
Ambient Temperature, T
A
(
_
C)
3.0
2.0
1.0
0
−
1.0
−
2.0
−
3.0
−
50 125
−
25 0 25 50 75 100
50 Units Shown
V
S
=3.3V
60
40
20
0
−
20
−
40
−
60
REMOTE TEMPERATURE ERROR
vs LEAKAGE RESISTANCE
Leakage Resistance (M
Ω
)
0 5 10 15 20 25 30
Remote Temperature Error (
_
C)
R−GND
R−V
S
Figure 3. Figure 4.
REMOTE TEMPERATURE ERROR vs SERIES RESISTANCE
(Diode−Connected Transistor, 2N3906 PNP)
Remote Temperature Error (
_
C)
R
S
(
Ω
)
2.0
1.5
1.0
0.5
0
−
0.5
−
1.0
−
1.5
−
2.0
03500500 1000 1500 2000 2500 3000
V
S
=2.7V
V
S
=5.5V
(see Figure 11)
Figure 5.
REMOTE TEMPERATURE ERROR vs SERIES RESISTANCE
(GND Collector−Connected Transistor, 2N3906 PNP)
Remote Temperature Error (
_
C)
R
S
(
Ω
)
2.0
1.5
1.0
0.5
0
−
0.5
−
1.0
−
1.5
−
2.0
03500500 1000 1500 2000 2500 3000
V
S
=2.7V
V
S
=5.5V
(see Figure 11)
3
2
1
0
−
1
−
2
−
3
REMOTE TEMPERATURE ERROR
vs DIFFERENTIAL CAPACITANCE
Capacitance (nF)
0 0.5 1.0 1.5 2.0 2.5 3.0
Remote Temperature Error (
_
C)
Figure 6.