Datasheet
Table Of Contents
- 1 Digital Media System-on-Chip (DMSoC)
- Table of Contents
- 2 Revision History
- 3 Device Overview
- 3.1 Device Characteristics
- 3.2 Device Compatibility
- 3.3 ARM Subsystem
- 3.3.1 ARM926EJ-S RISC CPU
- 3.3.2 CP15
- 3.3.3 MMU
- 3.3.4 Caches and Write Buffer
- 3.3.5 Tightly Coupled Memory (TCM)
- 3.3.6 Advanced High-Performance Bus (AHB)
- 3.3.7 Embedded Trace Macrocell (ETM) and Embedded Trace Buffer (ETB)
- 3.3.8 ARM Memory Mapping
- 3.3.9 Peripherals
- 3.3.10 PLL Controller (PLLC)
- 3.3.11 Power and Sleep Controller (PSC)
- 3.3.12 ARM Interrupt Controller (AINTC)
- 3.3.13 System Module
- 3.3.14 Power Management
- 3.4 DSP Subsystem
- 3.5 Memory Map Summary
- 3.6 Pin Assignments
- 3.7 Terminal Functions
- 3.8 Device Support
- 3.9 Documentation Support
- 3.10 Community Resources
- 4 Device Configurations
- 4.1 System Module Registers
- 4.2 Power Considerations
- 4.3 Clock Considerations
- 4.4 Boot Sequence
- 4.5 Configurations At Reset
- 4.6 Configurations After Reset
- 4.7 Multiplexed Pin Configurations
- 4.7.1 Pin Muxing Selection At Reset
- 4.7.2 Pin Muxing Selection After Reset
- 4.7.3 Pin Multiplexing Details
- 4.7.3.1 PCI, HPI, EMIFA, and ATA Pin Muxing
- 4.7.3.2 PWM Signal Muxing
- 4.7.3.3 TSIF0 Input Signal Muxing (Serial/Parallel)
- 4.7.3.4 TSIF0 Output Signal Muxing (Serial/Parallel)
- 4.7.3.5 TSIF1 Input Signal Muxing (Serial Only)
- 4.7.3.6 TSIF1 Output Signal Muxing (Serial Only)
- 4.7.3.7 CRGEN Signal Muxing
- 4.7.3.8 UART0 Pin Muxing
- 4.7.3.9 UART1 Pin Muxing
- 4.7.3.10 UART2 Pin Muxing
- 4.7.3.11 ARM/DSP Communications Interrupts
- 4.7.3.12 Emulation Control
- 4.8 Debugging Considerations
- 5 System Interconnect
- 6 Device Operating Conditions
- 7 Peripheral Information and Electrical Specifications
- 7.1 Parameter Information
- 7.2 Recommended Clock and Control Signal Transition Behavior
- 7.3 Power Supplies
- 7.4 External Clock Input From DEV_MXI/DEV_CLKIN and AUX_MXI/AUX_CLKIN Pins
- 7.5 Clock PLLs
- 7.6 Enhanced Direct Memory Access (EDMA3) Controller
- 7.7 Reset
- 7.8 Interrupts
- 7.9 External Memory Interface (EMIF)
- 7.10 DDR2 Memory Controller
- 7.10.1 DDR2 Memory Controller Electrical Data/Timing
- 7.10.2 DDR2 Interface
- 7.10.2.1 DDR2 Interface Schematic
- 7.10.2.2 Compatible JEDEC DDR2 Devices
- 7.10.2.3 PCB Stackup
- 7.10.2.4 Placement
- 7.10.2.5 DDR2 Keep Out Region
- 7.10.2.6 Bulk Bypass Capacitors
- 7.10.2.7 High-Speed Bypass Capacitors
- 7.10.2.8 Net Classes
- 7.10.2.9 DDR2 Signal Termination
- 7.10.2.10 VREF Routing
- 7.10.2.11 DDR2 CK and ADDR_CTRL Routing
- 7.11 Video Port Interface (VPIF)
- 7.12 Transport Stream Interface (TSIF)
- 7.13 Clock Recovery Generator (CRGEN)
- 7.14 Video Data Conversion Engine (VDCE)
- 7.15 Peripheral Component Interconnect (PCI)
- 7.16 Ethernet MAC (EMAC)
- 7.17 Management Data Input/Output (MDIO)
- 7.18 Host-Port Interface (HPI) Peripheral
- 7.19 USB 2.0 [see Note]
- 7.20 ATA Controller
- 7.21 VLYNQ
- 7.22 Multichannel Audio Serial Port (McASP0/1) Peripherals
- 7.23 Serial Peripheral Interface (SPI)
- 7.24 Universal Asynchronouse Receiver/Transmitter (UART)
- 7.25 Inter-Integrated Circuit (I2C)
- 7.26 Pulse Width Modulator (PWM)
- 7.27 Timers
- 7.28 General-Purpose Input/Output (GPIO)
- 7.29 IEEE 1149.1 JTAG
- 8 Mechanical Packaging and Orderable Information
TMS320DM6467T
www.ti.com
SPRS605C –JULY 2009–REVISED JUNE 2012
6 Device Operating Conditions
6.1 Absolute Maximum Ratings Over Operating Case Temperature Range (Unless
Otherwise Noted)
(1)
Supply voltage ranges: Core (CV
DD
, DEV_CV
DD
, AUX_CV
DD
)
(2)
–0.5 V to 1.5 V
I/O, 3.3V (DV
DD33
, USB_V
DDA3P3
)
(2)
-0.3 V to 3.8 V
I/O, 1.8V (DV
DDR2
, PLL1V
DD18
, PLL2V
DD18
, DEV_DV
DD18
, AUX_DV
DD18
, -0.3 V to 2.6 V
USB_V
DD1P8
)
(2)
Input and Output voltage ranges: –0.3 V to 3.8 V
V I/O, 3.3-V pins (except PCI-capable pins)
–0.3 V to DV
DD33
+ 0.3 V
–0.5 V to 4.2 V
V I/O, 3.3-V pins PCI-capable pins
–0.5 V to DV
DD33
+ 0.5 V
–0.3 V to 2.6 V
V I/O, 1.8 V
–0.3 V to DV
DD18
+ 0.3 V
Operating case temperature (default) [-1G] 0°C to 85°C
ranges, T
c
:
(D version) Industrial Temperature [-1G] -40°C to 85°C
Storage temperature range, T
stg
(default) –55°C to 150°C
Electrostatic Discharge (ESD) ESD-HBM (Human Body Model)
(3)
± 2000 V
Performance:
ESD-CDM (Charged-Device Model)
(4)
± 500 V
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to V
SS.
(3) Based on JEDEC JESD22-A114E (Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)).
(4) Based on JEDEC JESD22-C101C (Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds
of Microelectronic Components).
Copyright © 2009–2012, Texas Instruments Incorporated Device Operating Conditions 135
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