Datasheet

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TMDS442
SLLS757A – AUGUST 2006 – REVISED MARCH 2007
ELECTRICAL CHARACTERISTICS (continued)
over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP
(1)
MAX UNIT
V
IH
= 5.3 V -150 150
I
IH
High-level digital input current µA
V
IH
= 2 V or V
CC
-85 85
I
IL
Low-level digital input current V
IL
= GND or 0.8 V -20 20 µA
STATUS PINS (HPD, 5V_SINK)
V
OH
High-level output voltage I
OH
= -4 mA 2.4 V
CC
V
V
OL
Low-level output voltage I
OL
= 4 mA GND 0.4 V
CONTROL PINS (LC_A0, LC_A1, GE, GPIO)
I
IH
High-level digital input current V
IH
= 2 V or V
CC
-10 10 µA
I
IL
Low-level digital input current V
IL
= GND or 0.8 V -10 10 µA
C
I
Input capacitance V
I
= GND or V
CC
10 pF
DDC I/O PINS (SCL_SINK, SDA_SINK)
V
I
= 5.5 V -50 50
I
lkg
Input leakage current µA
V
I
= V
CC
-10 10
I
OH
High-level output current V
O
= 3.6 V -10 10 µA
I
IL
Low-level input current V
IL
= GND -40 40 µA
OVS = NC 470 620
V
OL
Low-level output voltage I
OL
= 400 μ A or 4 mA OVS = GND 620 775 V
OVS = V
CC
775 950
OVS = NC 70
Low-level input voltage below output
V
OL
-V
ILC
Ensured by design OVS = GND 240 mV
low-level voltage level
OVS = V
CC
420
V
I
= 5.0 V or 0 V, Freq = 100 kHz 25
C
IO
Input/output capacitance pF
V
I
= 3.0 V or 0 V, Freq = 100 kHz 10
DDC I/O PINS (SCL, SDA) AND LOCAL I
2
C PINS (LC_SCL, LC_SDA)
V
I
= 5.5 V -50 50
I
lkg
Input leakage current μ A
V
I
= V
CC
-10 10
I
OH
High-level output current V
O
= 3.6 V -10 10 µA
I
IL
Low-level input current V
IL
= GND -10 10 µA
V
OL
Low-level output voltage I
OL
= 4 mA 0.2 V
V
I
= 5.0 V or 0 V, Freq = 100 kHz 25
C
I
Input capacitance pF
V
I
= 3.0 V or 0 V, Freq = 100 kHz 10
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