Datasheet

TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TLV2332I operating characteristics at specified free-air temperature, V
DD
= 3 V
PARAMETER
TEST CONDITIONS
T
A
TLV2332I
UNIT
PARAMETER
TEST
CONDITIONS
T
A
MIN TYP MAX
UNIT
SR
Slew rate at unity gain
V
IC
= 1 V,
R
L
= 100 k
V
I(PP)
= 1 V,
C
L
=20
p
F
25°C 0.38
V/µs
SR
Sle
w
rate
at
u
nit
y
gain
R
L
=
100
k
,
See Figure 34
C
L
=
20
F
,
85°C
0.29
V/
µ
s
V
n
Equivalent input noise voltage
f =1 kHz,
See Figure 35
R
S
= 20 ,
25°C 32
nV/Hz
B
OM
Maximum out
p
ut swing bandwidth
V
O
= V
OH
, C
L
= 20 pF,
25°C 34
kHz
B
OM
Ma
x
im
u
m
o
u
tp
u
t
-
s
w
ing
band
w
idth
OOH
,
R
L
= 100 k,
L
,
See Figure 34
85°C
32
kH
z
B
1
Unity gain bandwidth
V
I
= 10 mV, C
L
= 20 pF,
25°C 300
kHz
B
1
Unit
y-
gain
band
w
idth
I
,
R
L
= 100 k,
L
,
See Figure 36
85°C 235
kH
z
V
I
= 10 mV
,
f = B
1
,
–40°C 42°
φ
m
Phase margin
V
I
10
mV,
C
L
= 20 pF,
f
B
1
,
R
L
= 100 k,
25°C
39°
See Figure 36
85°C 36°
TLV2332I operating characteristics at specified free-air temperature, V
DD
= 5 V
PARAMETER
TEST CONDITIONS
T
A
TLV2332I
UNIT
PARAMETER
TEST
CONDITIONS
T
A
MIN TYP MAX
UNIT
V
IC
=1V
V
I(PP)
=1V
25°C 0.43
SR
Slew rate at unity gain
V
IC
=
1
V
,
R
L
= 100 k,
V
I(PP)
=
1
V
85°C 0.35
V/µs
SR
Sle
w
rate
at
u
nit
y
gain
L
,
C
L
= 20 pF,
SFi 34
V
I(PP)
=25V
25°C 0.40
V/
µ
s
See Figure 34
V
I(PP)
=
2
.
5
V
85°C 0.32
V
n
Equivalent input noise voltage
f =1 kHz,
See Figure 35
R
S
= 20 ,
25°C 32
nV/Hz
B
OM
Maximum out
p
ut swing bandwidth
V
O
= V
OH
, C
L
= 20 pF,
25°C 55
kHz
B
OM
Ma
x
im
u
m
o
u
tp
u
t
-
s
w
ing
band
w
idth
OOH
,
R
L
= 100 k,
L
,
See Figure 34
85°C
45
kH
z
B
1
Unity gain bandwidth
V
I
= 10 mV, C
L
= 20 pF,
25°C 525
kHz
B
1
Unit
y-
gain
band
w
idth
I
,
R
L
= 100 k,
L
,
See Figure 36
85°C
370
kH
z
V
I
= 10 mV
,
f = B
1
,
–40°C 43°
φ
m
Phase margin
V
I
10
mV,
C
L
= 20 pF,
f
B
1
,
R
L
= 100 k,
25°C
40°
See Figure 36
85°C 38°