Datasheet

TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2334Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2334. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
+
–
1OUT
1IN+
1IN–
V
DD
(4)
(6)
(3)
(2)
(5)
(1)
2IN+
2IN–
2OUT
(11)
V
DD–
/GND
+
–
3OUT
3IN+
3IN–
(13)
(10)
(9)
(12)
(8)
–
+
(14)
4OUT
4IN+
4IN–
+
–
(7)
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
T
J
max = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
68
108
(1) (2) (3) (4) (5) (6) (7)
(8)(9)(10)(11)(12)(13)(14)